IRG4PC50UD-MP

IRG4PC50UD-MP

$4.51
  • Description:IGBT 600V 55A TO-247AC
  • Series:-

SKU:b1bf2ed83809 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT 600V 55A TO-247AC
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Bag
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):55 A
  • Current - Collector Pulsed (Icm):220 A
  • Vce(on) (Max) @ Vge, Ic:2V @ 15V, 27A
  • Power - Max:200 W
  • Switching Energy:-
  • Input Type:Standard
  • Gate Charge:270 nC
  • Td (on/off) @ 25°C:-
  • Test Condition:-
  • Reverse Recovery Time (trr):75 ns
  • Operating Temperature:-
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247AC
  • Grade:-
  • Qualification:-

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IRG4PC50UD-MP

Overview

The IRG4PC50UD-MP is a high-voltage Insulated Gate Bipolar Transistor (IGBT) module manufactured by Infineon Technologies. It belongs to the IXYS Power Modules family, designed for robust industrial applications. The device features a planar field-stop technology that enhances switching performance and reduces tail current. It offers a collector-emitter voltage rating of 600V and a continuous collector current capability suitable for medium-power inverter topologies. The module utilizes a copper-clad direct bond copper substrate for superior thermal conductivity and mechanical stability.

Feature Summary

  • Planar field-stop IGBT technology for optimized switching characteristics
  • Direct Bond Copper substrate for enhanced thermal management
  • High short-circuit withstand capability for system protection
  • Low on-state voltage drop for improved efficiency

Applications

  • Induction heating systems
  • Uninterruptible power supplies
  • Motor drives and inverters

Procurement Notes

Verify the specific suffix 'MP' against official Infineon documentation to confirm exact pinout and packaging specifications. Ensure compatibility with existing gate drive circuits regarding voltage thresholds. Confirm thermal interface material requirements for optimal heat dissipation in the target application environment.

Selection Notes

Select this component based on its 600V blocking voltage and current handling capabilities relative to the load requirements. Evaluate the thermal resistance parameters to ensure adequate heatsinking solutions are available. Consider the switching frequency limitations inherent to the planar field-stop technology when designing the power stage.

Part Context

This module is part of Infineon's broader portfolio of discrete and module-level power semiconductors. It serves as a critical switching element in power conversion architectures. The design emphasizes reliability and longevity under demanding electrical stress conditions typical of industrial power electronics.

Replacement Considerations

Consult official cross-reference guides for equivalent parts from other manufacturers. Verify pin compatibility and thermal footprint before substituting. Ensure electrical ratings meet or exceed original design specifications.

IRG4PC50UD-MPIRG4PC50UD-MP
$4.51
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