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Product Detailed Parameters
- Description：IGBT 600V 55A TO-247AC
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：55 A
- Current - Collector Pulsed (Icm)：220 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 27A
- Power - Max：200 W
- Switching Energy：990µJ (on), 590µJ (off)
- Input Type：Standard
- Gate Charge：180 nC
- Td (on/off) @ 25°C：46ns/140ns
- Test Condition：480V, 27A, 5Ohm, 15V
- Reverse Recovery Time (trr)：50 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AC
- Grade：-
- Qualification：-
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Overview
The IRG4PC50UDPBF is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 70 A at 25 °C. The device utilizes a TO-247AC through-hole package with three pins. Key electrical parameters include a maximum gate-emitter voltage of ±20 V, a saturation voltage of 2 V, and a power dissipation rating of 200 W. It operates within a temperature range of -55 °C to +150 °C.
Feature Summary
- High-speed switching capability optimized for frequencies between 8 kHz and 60 kHz
- Robust thermal performance with a high power dissipation rating in a standard through-hole package
Applications
- Switch-mode power supplies
- Motor control drives
- Inverter circuits
Procurement Notes
Verify the exact suffix against official documentation, as variations such as UD or KP indicate differences in switching speed and saturation voltage. Confirm RoHS compliance status and check for end-of-life notices, as specific variants may be discontinued. Ensure the TO-247AC package dimensions match the target PCB footprint requirements before ordering.
Selection Notes
Select this component when a balance of high current handling and fast switching is required for medium-frequency applications. The 600 V rating suits general-purpose industrial inverters. Compare the 70 A continuous current against peak load demands and ensure adequate heatsinking to maintain junction temperatures below the 150 °C limit under expected operating conditions.
Part Context
This IGBT belongs to Infineon's discrete power transistor portfolio, designed for efficient energy conversion. It complements other devices in the IRG4PC series, offering standardized pinouts for easy integration into existing designs. The technology focuses on reducing switching losses while maintaining low conduction drops for improved system efficiency.
Replacement Considerations
Direct substitutes include the IRG4PC50UD-EPBF and IRG4PC50KPBF. Verify that the replacement variant matches the required switching frequency range and saturation voltage characteristics for the specific application circuit.
