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The IRG4PF50WDPbF is a single N-channel Insulated Gate Bipolar Transistor (IGBT) co-packaged with an ultrafast, soft-recovery anti-parallel diode. It features a maximum collector-emitter voltage of 900 V and a typical saturation voltage of 2.25 V at 15 V gate drive and 28 A collector current. The device utilizes the industry-standard TO-247AC package for through-hole mounting.
Verify the component against the official Infineon datasheet PD-95233 to confirm authenticity. Ensure the marking includes the 'P' indicator in the assembly line position to verify lead-free compliance. Cross-reference the lot code and date code with manufacturer records to validate production history before integration into designs.
Select this component when high-voltage blocking capability and low conduction losses are required in a single package. The integrated diode simplifies design by eliminating external components. Consider the thermal management requirements associated with the TO-247AC package for effective heat dissipation during operation.
This IGBT belongs to the IRG4 series from International Rectifier, now part of Infineon Technologies. It represents a generation of devices designed to replace larger-die MOSFETs up to 100 kHz, offering tighter parameter distribution and exceptional reliability through latest technology IGBT design.
Consult official replacement guides for direct equivalents. Verify pinout compatibility and electrical ratings such as VCES and VCE(sat) before substituting with other TO-247AC packaged IGBTs or diode-co-packed modules.