IRG4PF50WDPBF

IRG4PF50WDPBF

  • Description:IGBT 900V 51A TO-247AC
  • Series:-

SKU:6f9747478ec2 Category: Brand:

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Product Detailed Parameters

  • Description:IGBT 900V 51A TO-247AC
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tube
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):900 V
  • Current - Collector (Ic) (Max):51 A
  • Current - Collector Pulsed (Icm):204 A
  • Vce(on) (Max) @ Vge, Ic:2.7V @ 15V, 28A
  • Power - Max:200 W
  • Switching Energy:2.63mJ (on), 1.34mJ (off)
  • Input Type:Standard
  • Gate Charge:160 nC
  • Td (on/off) @ 25°C:71ns/150ns
  • Test Condition:720V, 28A, 5Ohm, 15V
  • Reverse Recovery Time (trr):90 ns
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247AC
  • Grade:-
  • Qualification:-

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IRG4PF50WDPBF

Overview

The IRG4PF50WDPbF is a single N-channel Insulated Gate Bipolar Transistor (IGBT) co-packaged with an ultrafast, soft-recovery anti-parallel diode. It features a maximum collector-emitter voltage of 900 V and a typical saturation voltage of 2.25 V at 15 V gate drive and 28 A collector current. The device utilizes the industry-standard TO-247AC package for through-hole mounting.

Feature Summary

  • Co-packaged HEXFRED ultrafast, soft-recovery anti-parallel diode optimized for bridge configurations
  • Optimized switching performance for welding and switch-mode power supply applications
  • Industry benchmark switching losses to improve efficiency across all power supply topologies

Applications

  • Welding equipment
  • Switch-mode power supplies
  • Bridge configurations requiring integrated freewheeling diodes

Procurement Notes

Verify the component against the official Infineon datasheet PD-95233 to confirm authenticity. Ensure the marking includes the 'P' indicator in the assembly line position to verify lead-free compliance. Cross-reference the lot code and date code with manufacturer records to validate production history before integration into designs.

Selection Notes

Select this component when high-voltage blocking capability and low conduction losses are required in a single package. The integrated diode simplifies design by eliminating external components. Consider the thermal management requirements associated with the TO-247AC package for effective heat dissipation during operation.

Part Context

This IGBT belongs to the IRG4 series from International Rectifier, now part of Infineon Technologies. It represents a generation of devices designed to replace larger-die MOSFETs up to 100 kHz, offering tighter parameter distribution and exceptional reliability through latest technology IGBT design.

Replacement Considerations

Consult official replacement guides for direct equivalents. Verify pinout compatibility and electrical ratings such as VCES and VCE(sat) before substituting with other TO-247AC packaged IGBTs or diode-co-packed modules.

IRG4PF50WDPBFIRG4PF50WDPBF

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