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Product Detailed Parameters
- Description：IGBT 1200V 11A TO-247AC
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：11:00 AM
- Current - Collector Pulsed (Icm)：22 A
- Vce(on) (Max) @ Vge, Ic：4.3V @ 15V, 5A
- Power - Max：60 W
- Switching Energy：620µJ (on), 300µJ (off)
- Input Type：Standard
- Gate Charge：28 nC
- Td (on/off) @ 25°C：50ns/100ns
- Test Condition：800V, 5A, 50Ohm, 15V
- Reverse Recovery Time (trr)：51 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AC
- Grade：-
- Qualification：-
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Overview
The IRG4PH20KDPBF is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features an integrated ultrafast soft recovery diode and utilizes TRENCHSTOP™ technology for high efficiency. The device operates with a maximum collector-emitter voltage of 1200 V and supports a continuous collector current of 5 A at 25°C. Typical saturation voltage is 3.17 V at 15 V gate drive. It is housed in a TO-247-3 package designed for through-hole mounting, suitable for high-power density applications.
Feature Summary
- Integrates an ultrafast soft recovery diode to minimize electromagnetic interference and switching losses.
- Optimized short-circuit rating of 10 µs for robust motor control protection.
- Combines low conduction losses with high switching speed via latest generation design.
Applications
- Motor control systems
- High power density inverters
- Switching power supplies
Procurement Notes
Verify component authenticity through authorized channels due to potential counterfeits. Confirm RoHS compliance status as specified in the official datasheet. Check for end-of-life notices or obsolescence warnings before finalizing procurement plans. Ensure storage conditions meet manufacturer specifications to maintain reliability.
Selection Notes
Select this component for designs requiring high voltage isolation and fast recovery characteristics. Consider the thermal resistance of the TO-247-3 package for heat dissipation requirements. Evaluate the short-circuit withstand time against system fault protection capabilities. Compare total loss performance with alternative IGBT families for optimal efficiency.
Part Context
This part belongs to Infineon's TRENCHSTOP™ IGBT family, known for combining trench gate technology with field-stop structures. It represents a legacy product line from International Rectifier, now part of Infineon. The device is designed for industrial and consumer power electronics where reliability and efficiency are critical.
Replacement Considerations
Consult official replacement lists for obsolete parts. Potential substitutes may include newer generations of TRENCHSTOP™ IGBTs with similar voltage and current ratings. Verify pin compatibility and thermal characteristics before substitution.
FAQ
What is the typical saturation voltage of the IRG4PH20KDPBF?
The typical collector-emitter saturation voltage is 3.17 V at a gate-emitter voltage of 15 V and a collector current of 5 A.
Is the IRG4PH20KDPBF short-circuit rated?
Yes, it is optimized for motor control with a short-circuit rating of 10 µs at VCC = 720 V and TJ = 125°C.
What type of diode is integrated with this IGBT?
It integrates an ultrafast soft recovery diode to reduce switching losses and electromagnetic interference.
