IRG4PH30KD

$2.35

Description：IGBT 1200V 20A TO-247AC
Series：-

SKU:1766d7dd4e84 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT 1200V 20A TO-247AC
Series：-
Mfr：Infineon Technologies
Package：Bag
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：20 A
Current - Collector Pulsed (Icm)：40 A
Vce(on) (Max) @ Vge, Ic：4.2V @ 15V, 10A
Power - Max：100 W
Switching Energy：950µJ (on), 1.15mJ (off)
Input Type：Standard
Gate Charge：53 nC
Td (on/off) @ 25°C：39ns/220ns
Test Condition：800V, 10A, 23Ohm, 15V
Reverse Recovery Time (trr)：50 ns
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247AC
Grade：-
Qualification：-

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IRG4PH30KD

Overview

The IRG4PH30KD is a single N-channel Insulated Gate Bipolar Transistor (IGBT) co-packaged with an ultrafast soft recovery antiparallel diode. It features a collector-emitter breakdown voltage of 1200 V and a continuous collector current rating of 20 A at 25°C. The device utilizes the fourth-generation IGBT technology to achieve low conduction losses, with a typical saturation voltage of 3.1 V at 15 V gate drive and 10 A collector current. It is housed in a TO-247AC package.

Feature Summary

Co-packaged with HEXFRED ultrafast, ultrasoft recovery diodes to minimize switching noise, EMI, and reverse recovery losses.
Optimized for high short-circuit ruggedness, supporting a duration of 10 µs under specified conditions.
Combines low conduction losses with high switching speed for improved power density in motor control applications.

Applications

Motor control systems
High-efficiency power conversion
Industrial inverters

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm compliance status and packaging details. Ensure the component matches the required thermal and electrical specifications for the target application before procurement.

Selection Notes

Select this component for designs requiring robust short-circuit capability and reduced electromagnetic interference. The integrated diode simplifies circuit topology by eliminating the need for external freewheeling diodes in certain configurations.

Part Context

This part belongs to the IRG4P series from Infineon Technologies, representing a generation of IGBTs designed for high-performance industrial applications. It serves as a successor to previous generations like the IRGPH30MD2, offering tighter parameter distributions and higher efficiency.

Replacement Considerations

Official documentation indicates that this part replaces the IRGPH30MD2 product. Verify pinout compatibility and thermal characteristics when substituting legacy components.