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Product Detailed Parameters
- Description：IGBT 1200V 30A TO-247AC
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：30 A
- Current - Collector Pulsed (Icm)：60 A
- Vce(on) (Max) @ Vge, Ic：3.4V @ 15V, 15A
- Power - Max：160 W
- Switching Energy：730µJ (on), 1.66mJ (off)
- Input Type：Standard
- Gate Charge：94 nC
- Td (on/off) @ 25°C：30ns/200ns
- Test Condition：960V, 15A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AC
- Grade：-
- Qualification：-
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Overview
The IRG4PH40KPBF is a Generation 4 Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features an N-channel configuration housed in a TO-247AD package with three pins. The device supports a collector-emitter breakdown voltage of 1200V and a continuous collector current of 41A at 25°C. It is optimized for high-frequency operation, specifically designed for hard switching applications between 8 kHz and 40 kHz, and resonant modes exceeding 200 kHz.
Feature Summary
- Generation 4 IGBT design providing tighter parameter distribution and higher efficiency compared to previous generations.
- UltraFast switching characteristics optimized for high operating frequencies in both hard switching and resonant topologies.
- Industry-standard TO-247AD package facilitating flange mounting and robust thermal management.
Applications
- High-frequency power conversion circuits
- Resonant mode switching applications
- Industrial motor drives
Procurement Notes
Verify the specific suffix 'PBF' indicates lead-free compliance when sourcing. Confirm the manufacturer is Infineon Technologies, as International Rectifier was acquired. Ensure the package matches the TO-247AD specification for mechanical compatibility. Cross-reference the datasheet version to confirm the 1200V rating and 41A current capacity are consistent with the specific revision being procured.
Selection Notes
Select this component for designs requiring high voltage isolation and fast switching speeds. The 1200V rating suits medium-voltage industrial applications. The TO-247AD package allows for direct heatsink mounting. Consider the thermal resistance characteristics for heat sink sizing. Verify gate drive requirements align with the Generation 4 specifications for optimal performance.
Part Context
This part belongs to Infineon's UltraFast IGBT family, specifically the Generation 4 series. It succeeds earlier generations by offering improved efficiency and parameter consistency. The product line targets applications demanding reliable performance in high-power environments. The TO-247AD form factor ensures compatibility with existing board layouts designed for standard power transistors.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Verify electrical equivalence with other 1200V, 41A IGBTs if cross-referencing is required.
