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The IRG4PH40UDPBF is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a collector-emitter breakdown voltage of 1200V and a continuous collector current rating of 41A at 25°C. The device utilizes the UltraFast3 technology, enabling switching frequencies in the range of 5-40kHz. It is housed in a TO-247AD package with three pins, designed for high-power applications requiring robust performance and low conduction losses.
Verify the complete part number including the PBF suffix to confirm lead-free compliance and RoHS adherence. Ensure the ordering code matches the specific tape-and-reel or tube packaging variant required for your assembly process. Cross-reference the manufacturer's latest datasheet revision to confirm pinout compatibility and thermal characteristics before finalizing procurement specifications.
Select this component for designs requiring high-voltage blocking capabilities combined with fast switching speeds. The TO-247AD package facilitates efficient heat dissipation through direct mounting to heatsinks. Consider the gate charge and total gate energy requirements when designing the driver circuitry to ensure optimal switching performance and minimize electromagnetic interference during operation.
This IGBT belongs to Infineon's UltraFast series, which integrates advanced trench gate technology with field-stop structures. The series targets applications demanding high efficiency and reliability in medium to high-power ranges. The TO-247AD form factor provides a standardized mechanical interface for industrial power electronics, ensuring compatibility with existing thermal management solutions and PCB layouts.
Direct substitutes include the IRG4PH40UD-E and IRG4PC40KPBF, though voltage ratings and package types may differ. Verify electrical parameters such as Vces and Ic against the original design requirements. Consult official replacement guides to confirm functional equivalence and thermal performance similarities.