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Product Detailed Parameters
- Description：IGBT 1200V 45A TO-247AC
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：45 A
- Current - Collector Pulsed (Icm)：90 A
- Vce(on) (Max) @ Vge, Ic：3.5V @ 15V, 24A
- Power - Max：200 W
- Switching Energy：3.83mJ (on), 1.9mJ (off)
- Input Type：Standard
- Gate Charge：180 nC
- Td (on/off) @ 25°C：87ns/140ns
- Test Condition：800V, 24A, 5Ohm, 15V
- Reverse Recovery Time (trr)：90 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AC
- Grade：-
- Qualification：-
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Overview
The IRG4PH50KDPBF is a single silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a TO-247-3 through-hole package and operates with a maximum collector-emitter voltage of 1.2 kV. The device supports a continuous collector current of 45 A at 25°C and handles up to 200 W of power dissipation. Key electrical parameters include a saturation voltage of 3.5 V, gate-emitter limits of ±20 V, and an operating temperature range from -55°C to +150°C.
Feature Summary
- Ultrafast switching capability optimized for operation within the 4 kHz to 20 kHz frequency range.
- COPACK IGBT technology designed for enhanced thermal performance and robustness in high-power applications.
Applications
- High-frequency power conversion systems
- Industrial motor drives
- Uninterruptible power supplies (UPS)
Procurement Notes
This component has reached End-of-Life status and is no longer actively produced or distributed by Infineon Technologies. Verification of availability should focus on authorized distributors holding remaining stock or approved replacement alternatives. Sourcing must strictly adhere to manufacturer guidelines for obsolete parts to ensure authenticity and compliance with RoHS standards.
Selection Notes
Designers requiring this specific 1.2 kV, 45 A specification should evaluate the IKW25N120H3XK as a potential substitute. Selection criteria must account for differences in saturation voltage, switching speed, and thermal resistance between the legacy COPACK design and modern trench technologies. Compatibility with existing PCB footprints and drive circuits requires careful validation against the new component's datasheet.
Part Context
The IRG4PH50KDPBF belongs to Infineon’s legacy COPACK IGBT family, utilizing planar technology. It was engineered for medium-power industrial applications requiring reliable switching at frequencies up to 20 kHz. As a discontinued product, it represents an earlier generation of silicon IGBTs before the widespread adoption of field-stop and trench structures found in current portfolios.
Replacement Considerations
The IKW25N120H3XK is identified as a public confirmed substitute part number. Engineers must verify pinout compatibility and thermal characteristics when transitioning from the IRG4PH50KDPBF to this newer H3 series device.
