IRG4PH50SPBF

IRG4PH50SPBF

  • Description:IGBT 1200V 57A TO-247AC
  • Series:-

SKU:75d57d1b3d0b Category: Brand:

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Product Detailed Parameters

  • Description:IGBT 1200V 57A TO-247AC
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tube
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):57 A
  • Current - Collector Pulsed (Icm):114 A
  • Vce(on) (Max) @ Vge, Ic:1.7V @ 15V, 33A
  • Power - Max:200 W
  • Switching Energy:1.8mJ (on), 19.6mJ (off)
  • Input Type:Standard
  • Gate Charge:167 nC
  • Td (on/off) @ 25°C:32ns/845ns
  • Test Condition:960V, 33A, 5Ohm, 15V
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247AC
  • Grade:-
  • Qualification:-

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IRG4PH50SPBF

Overview

The IRG4PH50SPbF is a standard speed n-channel IGBT in a TO-247AC package. It features a collector-emitter voltage of 1200V and a continuous collector current of 57A at 25°C. The typical saturation voltage is 1.47V at 33A. Switching losses include 1.80mJ turn-on and 19.6mJ turn-off energy at 25°C. Total gate charge is typically 167nC. Maximum power dissipation reaches 200W at 25°C case temperature.

Feature Summary

  • Fourth-generation IGBT design providing tighter parameter distribution
  • Optimized for low saturation voltage and low operating frequencies below 1kHz
  • Integrated emitter inductance to minimize switching losses
  • Lead-free free package compliant with RoHS standards

Applications

  • Power train inverters for hybrid electric vehicles
  • DC-AC motor drives
  • Induction heating systems
  • High frequency welding equipment

Procurement Notes

Verify the specific suffix PbF indicates lead-free compliance against the manufacturer's latest documentation. Confirm the TO-247AC physical dimensions match your thermal interface requirements. Check for any obsolescence notices or lifecycle status changes directly from Infineon before finalizing procurement plans.

Selection Notes

Select this component for applications requiring high voltage blocking capability up to 1200V. Ensure the thermal management system can handle the specified junction-to-case thermal resistance. Verify that the drive circuit provides the necessary gate voltage levels for optimal saturation performance.

Part Context

This device belongs to the fourth-generation IGBT family from Infineon Technologies, formerly International Rectifier. It utilizes planar technology to achieve improved efficiency compared to previous generations. The part is designed specifically for automotive and industrial power conversion applications.

Replacement Considerations

IRG4PH50S

FAQ

What is the maximum pulsed collector current?

The maximum pulsed collector current is 114A.

Does the package include internal emitter inductance?

Yes, the device includes an internal emitter inductance of approximately 13nH measured 5mm from the package.

What is the typical total gate charge?

The typical total gate charge is 167nC under conditions of IC = 33A and VCC = 400V.

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