IRG4PSC71KPBF

Overview

The IRG4PSC71KPBF is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 85 A at 25 °C. The device utilizes a TO-274AA-3 through-hole package with a power dissipation rating of 350 W. Key electrical parameters include a collector-emitter saturation voltage of 2.3 V, a gate-emitter voltage range of -20 V to +20 V, and an operating temperature range from -55 °C to +150 °C.

Feature Summary

• Integrated ultrafast soft recovery diode for efficient commutation
• Optimized for high-frequency switching applications between 8 kHz and 25 kHz
• Designed for robust thermal performance in high-power environments

Applications

• High-frequency motor drives
• Switch-mode power supplies
• Inverter circuits

Procurement Notes

This component has been officially discontinued by the manufacturer. Verify availability through authorized distributors or secondary market suppliers. Confirm that replacement units are genuine and meet original specifications before integration into designs.

Selection Notes

Select this IGBT for applications requiring high current handling and fast switching speeds within a 600 V system. Ensure the design accommodates the specific thermal requirements of the TO-274AA-3 package and the necessary gate drive voltages for optimal performance.

Part Context

The IRG4PSC71KPBF belongs to the IRG4 series of discrete IGBTs from Infineon. This series is engineered for medium to high-power applications, combining the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. The part is specifically designed for efficiency in industrial power conversion systems.

Replacement Considerations

As the part is discontinued, verify functional equivalents such as other IRG4 series variants or modern replacements from Infineon that match the 600V/85A specification and TO-274AA-3 footprint.