IRG4PSH71U

Overview

The IRG4PSH71U is a Generation 4 UltraFast Speed Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power switching. It features a Super-247 package with a collector-to-emitter voltage rating of 1200 V and a continuous collector current capability of 99 A at 25°C case temperature. The device exhibits a typical saturation voltage of 2.50 V at 15 V gate drive and 50 A collector current, ensuring low conduction losses. Switching characteristics include a total switching loss of 14.3 mJ at 25°C and 25 mJ at 150°C under specified test conditions.

Feature Summary

• UltraFast switching speed optimized for hard switching frequencies between 8 to 40 kHz and resonant mode soft switching up to 200 kHz.
• Generation 4 IGBT design providing tighter parameter distribution and higher efficiency through minimized switching and conduction losses compared to prior generations.
• Super-247 package offering increased creepage distance to 5.35 mm and double the power handling capability of standard TO-247 packages within the same footprint.

Applications

• High-frequency inverter systems operating in hard switching modes
• Resonant mode soft switching applications requiring ultrafast recovery
• Power conversion designs necessitating maximum power density and space savings

Procurement Notes

Verify component authenticity by checking manufacturer markings against the datasheet outline. Confirm the specific ordering suffix matches the required variant, as suffixes may indicate packaging or qualification differences. Ensure storage and handling procedures comply with moisture sensitivity levels to prevent damage before soldering.

Selection Notes

Select this component for applications demanding high efficiency and compact form factors. The Super-247 package allows for higher power density than TO-247 while occupying less space than TO-264. Consider thermal management requirements carefully, as the device supports high currents but requires adequate heat sinking to maintain junction temperatures within safe operating limits.

Part Context

This IGBT belongs to the Generation 4 UltraFast series from International Rectifier, now part of Infineon Technologies. It represents an evolution in bipolar transistor technology, focusing on reducing energy losses during switching transitions. The product line targets industrial and consumer markets where performance and size constraints are critical.

Replacement Considerations

Direct replacements should match the 1200V rating, Super-247 package, and UltraFast switching characteristics. Verify that alternative devices offer comparable saturation voltage and switching loss metrics to ensure system efficiency is maintained without redesigning the thermal or gate drive circuitry.

FAQ

What is the maximum operating frequency for this IGBT?

The IRG4PSH71U is optimized for operating frequencies between 8 to 40 kHz in hard switching applications and up to 200 kHz in resonant mode soft switching.

How does the Super-247 package compare to TO-247?

The Super-247 package provides twice the power handling capability of a standard TO-247 package while occupying less space than a TO-264 package, along with an increased creepage distance of 5.35 mm.

What is the typical saturation voltage at rated conditions?

The typical collector-to-emitter saturation voltage (VCE(on)) is 2.50 V when measured at a gate-to-emitter voltage of 15 V and a collector current of 50 A.