IRG4RC10KD

Description：IGBT 600V 9A TO-252AA
Series：-

SKU:4e7f837eeb6e Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT 600V 9A TO-252AA
Series：-
Mfr：Infineon Technologies
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：9:00 AM
Current - Collector Pulsed (Icm)：18 A
Vce(on) (Max) @ Vge, Ic：2.62V @ 15V, 5A
Power - Max：38 W
Switching Energy：250µJ (on), 140µJ (off)
Input Type：Standard
Gate Charge：19 nC
Td (on/off) @ 25°C：49ns/97ns
Test Condition：480V, 5A, 100Ohm, 15V
Reverse Recovery Time (trr)：28 ns
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package：TO-252AA (DPAK)
Grade：-
Qualification：-

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IRG4RC10KD

Overview

The IRG4RC10KD is a short-circuit rated UltraFast IGBT with an integrated ultrafast soft recovery diode. It features a collector-emitter voltage of 600 V and a continuous collector current of 5 A at 25°C, dropping to 3.5 A at 100°C. The typical saturation voltage is 2.39 V at 15 V gate drive. Packaged in a surface-mountable TO-263 (D2PAK) case, it supports switching frequencies up to 20 kHz.

Feature Summary

Integrated ultrafast soft recovery diode for efficient commutation
Short-circuit ruggedness for enhanced system reliability
UltraFast switching technology minimizing power losses

Applications

High-frequency DC-DC converters
Uninterruptible Power Supplies (UPS)
Switched-mode power supplies (SMPS)

Procurement Notes

Verify the specific suffix 'KD' confirms the inclusion of the integrated diode variant. Confirm the package designation matches the required thermal management solution. Ensure the component meets RoHS compliance standards for the target assembly process. Cross-reference the manufacturer's latest datasheet for any updates on recommended operating conditions.

Selection Notes

Select this component for applications requiring high switching speeds and robust short-circuit protection. The integrated diode simplifies circuit design by eliminating external freewheeling requirements. Evaluate thermal performance based on the specified junction-to-case resistance. Consider the trade-off between switching speed and electromagnetic interference (EMI).

Part Context

This device belongs to the UltraFast IGBT family from Infineon Technologies, formerly International Rectifier. It combines the low conduction losses of IGBTs with the fast recovery characteristics of diodes. The product line targets high-efficiency power conversion systems where size and weight are critical constraints.