ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT 600V 14A TO-252AA
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：14 A
- Current - Collector Pulsed (Icm)：18 A
- Vce(on) (Max) @ Vge, Ic：1.8V @ 15V, 8A
- Power - Max：38 W
- Switching Energy：310µJ (on), 3.28mJ (off)
- Input Type：Standard
- Gate Charge：15 nC
- Td (on/off) @ 25°C：76ns/815ns
- Test Condition：480V, 8A, 100Ohm, 15V
- Reverse Recovery Time (trr)：28 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package：TO-252AA (DPAK)
- Grade：-
- Qualification：-
Download product information
Overview
The IRG4RC10SD is a 600 V, 14 A N-channel Insulated Gate Bipolar Transistor (IGBT) from Infineon Technologies. It utilizes Field-Stop technology to optimize switching performance and conduction losses. The device is housed in a surface-mount DPAK package with three pins. It operates within a junction temperature range of -55 °C to +150 °C and features a maximum gate-emitter voltage of ±20 V.
Feature Summary
- Field-Stop technology for optimized switching characteristics
- Surface-mount DPAK packaging for compact integration
- High thermal stability up to 150 °C junction temperature
Applications
- Motor control systems
- Power supply units
- Industrial inverters
Procurement Notes
Verify the specific suffix against official Infineon documentation to confirm exact electrical parameters and pinout configuration. Ensure the component meets required automotive or industrial qualification standards if applicable. Cross-reference datasheet revision dates to validate current specifications before procurement.
Selection Notes
Select this IGBT for applications requiring high efficiency in medium-power switching environments. Consider the DPAK package constraints for thermal management and PCB layout. Evaluate the 600 V rating against system voltage peaks and ensure gate drive compatibility with the ±20 V limit.
Part Context
This component belongs to Infineon's IGBT portfolio designed for power electronics. It complements other discrete switches by offering improved energy efficiency through advanced semiconductor structures. The product line supports various industrial and consumer power conversion needs.
Replacement Considerations
Consult official substitution guides for compatible alternatives. Verify pin compatibility and thermal resistance values when considering cross-brand replacements.
