IRG4RC10SDPBF

IRG4RC10SDPBF

  • Description:IGBT 600V 14A TO-252AA
  • Series:-

SKU:86d2313f8f8a Category: Brand:

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Product Detailed Parameters

  • Description:IGBT 600V 14A TO-252AA
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tube
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):14 A
  • Current - Collector Pulsed (Icm):18 A
  • Vce(on) (Max) @ Vge, Ic:1.8V @ 15V, 8A
  • Power - Max:38 W
  • Switching Energy:310µJ (on), 3.28mJ (off)
  • Input Type:Standard
  • Gate Charge:15 nC
  • Td (on/off) @ 25°C:76ns/815ns
  • Test Condition:480V, 8A, 100Ohm, 15V
  • Reverse Recovery Time (trr):28 ns
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package:TO-252AA (DPAK)
  • Grade:-
  • Qualification:-

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IRG4RC10SDPBF

Overview

The IRG4RC10SDPBF is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 14 A at 25 °C. The device operates within a temperature range of -55 °C to +150 °C and has a power dissipation rating of 38 W. It utilizes a DPAK surface-mount package with three pins.

Feature Summary

  • Single N-channel IGBT configuration for discrete switching applications
  • Surface-mount DPAK packaging for compact circuit board integration
  • High-temperature operation capability up to 150 °C junction temperature

Applications

  • Motor drive systems
  • Power supply circuits
  • Industrial control equipment

Procurement Notes

Verify the specific suffix 'SDPBF' against official Infineon documentation to confirm package type and RoHS compliance status. Ensure the component matches the required 600V rating and 14A current capacity for the target application design before procurement.

Selection Notes

Select this component when a surface-mount IGBT with 600V blocking voltage is required. The DPAK package suits space-constrained designs. Evaluate thermal management needs based on the 38W dissipation rating and ensure gate drive compatibility with standard logic levels.

Part Context

This part belongs to the Infineon IGBT transistor family, specifically designed for medium-power switching applications. It complements other devices in the series offering different current ratings and package options for varied industrial and consumer electronics requirements.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material. Consult official Infineon cross-reference guides for potential alternatives.

IRG4RC10SDPBFIRG4RC10SDPBF

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