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The IRG4RC10SDTRPBF is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a collector-emitter voltage rating of 600V and a continuous collector current of 14A at 25°C. The device operates within a temperature range of -55°C to +175°C and has a power dissipation capacity of 38W. Packaged in a TO-252-3 (DPAK) surface-mount housing, it is designed for high-frequency switching applications up to 1kHz.
Verify the specific suffix 'TRPBF' against official Infineon documentation to confirm tape-and-reel packaging and lead-free compliance status. Confirm component lifecycle status as obsolete or recommended for new designs prior to procurement planning. Ensure storage conditions align with manufacturer guidelines for moisture sensitivity levels.
Select this component for low-power switching applications requiring 600V blocking capability and moderate current handling. Evaluate thermal resistance requirements relative to the 38W dissipation limit. Consider the TO-252-3 footprint constraints during PCB layout. Compare performance metrics against newer generations if long-term supply availability is critical.
This part belongs to the IRG4RC series of fast IGBTs from Infineon Technologies. The series targets general-purpose industrial and consumer applications where compact size and reliable switching are prioritized over high-current capacity. It represents a legacy product line within the company's discrete semiconductor portfolio.
Publicly confirmed substitute part numbers are not available in the provided source material. Consult official Infineon replacement guides for equivalent specifications.