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Product Detailed Parameters
- Description：IGBT 600V 8.5A TO-252AA
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：8.5 A
- Current - Collector Pulsed (Icm)：34 A
- Vce(on) (Max) @ Vge, Ic：2.6V @ 15V, 5A
- Power - Max：38 W
- Switching Energy：140µJ (on), 120µJ (off)
- Input Type：Standard
- Gate Charge：15 nC
- Td (on/off) @ 25°C：40ns/87ns
- Test Condition：480V, 5A, 100Ohm, 15V
- Reverse Recovery Time (trr)：28 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package：TO-252AA (DPAK)
- Grade：-
- Qualification：-
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Overview
The IRG4RC10UD is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a maximum collector-emitter voltage of 600 V and a continuous collector current rating of 14 A at 25 °C. The device utilizes a surface-mount DPAK package with three pins. Key electrical parameters include a maximum gate-emitter voltage of ±20 V, a collector-emitter saturation voltage of 2.61 V, and a power dissipation capacity of 25 W. The component operates within a temperature range from -55 °C to +150 °C.
Feature Summary
- Single N-channel IGBT configuration for discrete switching applications
- Surface-mount DPAK package design for automated assembly
- High-temperature operation capability up to 150 °C junction temperature
Applications
- Switch-mode power supplies
- Motor control circuits
- DC-DC converters
Procurement Notes
Verify the specific suffix against official documentation, as generic model numbers often omit critical tape-and-reel or lead-free variants. Confirm RoHS compliance status directly with the manufacturer's current datasheet revision. Ensure the procurement channel provides traceable origin data to avoid counterfeit components. Cross-reference the part number with the latest availability status, as manufacturing lifecycles change frequently.
Selection Notes
Select this component when a 600 V rated IGBT in a compact surface-mount form factor is required. The 14 A current rating suits moderate power levels where thermal management via PCB copper planes is feasible. Consider the 2.61 V saturation voltage for conduction loss calculations. Verify that the DPAK package fits the available board space and thermal constraints compared to through-hole alternatives.
Part Context
This IGBT belongs to Infineon’s general-purpose power transistor portfolio, designed for efficient energy conversion. It complements other discrete semiconductors like MOSFETs and diodes in complete power stages. The technology focuses on balancing switching speed and conduction losses for cost-effective industrial and consumer electronics solutions.
Replacement Considerations
Consult official substitution guides for direct pin-compatible equivalents. Generic replacements may differ in saturation voltage or switching characteristics. Verify thermal resistance values match the original design requirements before integrating alternative sources.
