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The IRG4RC10UDTRRP is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a collector-emitter voltage rating of 600 V and a continuous collector current capacity of 8.5 A. The device operates within a temperature range of -55°C to +150°C. Key electrical parameters include a saturation voltage of 2.3 V at 8.5 A and a turn-off time of 100 ns. Power dissipation is rated at 38 W under specified conditions. The component utilizes a TO-252AA (DPAK) surface-mount package, designed for efficient thermal management in compact electronic circuits.
Verify the exact part number suffix against official Infineon documentation to ensure correct packaging and tape-reel specifications. Confirm that the procurement channel provides original manufacturer components to avoid counterfeit risks. Check for any specific handling requirements related to the surface-mount package type during assembly processes.
Select this component when a single-channel IGBT with 600V blocking capability and approximately 8.5A current handling is required. The TO-252AA package is appropriate for applications where space constraints necessitate surface-mount technology. Ensure the gate drive circuitry supports the specified switching times and voltage levels for optimal performance.
This IGBT belongs to Infineon's RC series, which focuses on reduced switching losses and optimized dynamic behavior. The RC series is engineered for applications demanding high efficiency and fast response times. The DPAK variant offers a balance between power handling capabilities and physical footprint, making it suitable for various medium-power electronic designs.
Consult official Infineon cross-reference lists for verified substitutes. Ensure replacement parts match the 600V rating, 8.5A current capacity, and TO-252AA package dimensions. Verify compatibility with existing gate drive requirements and thermal management solutions before implementation.