ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT 600V 8.5A TO-252AA
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：8.5 A
- Current - Collector Pulsed (Icm)：34 A
- Vce(on) (Max) @ Vge, Ic：2.6V @ 15V, 5A
- Power - Max：38 W
- Switching Energy：80µJ (on), 160µJ (off)
- Input Type：Standard
- Gate Charge：15 nC
- Td (on/off) @ 25°C：19ns/116ns
- Test Condition：480V, 5A, 100Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package：TO-252AA (DPAK)
- Grade：-
- Qualification：-
Download product information
Overview
The IRG4RC10UPBF is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 14 A at 25 °C. The device utilizes a DPAK surface-mount package conforming to the TO-252AA outline. Key electrical characteristics include a gate-emitter voltage range of ±20 V, a collector-emitter saturation voltage of 2.61 V, and a power dissipation rating of 25 W. It operates within a temperature range from -55 °C to +150 °C.
Feature Summary
- Single N-channel IGBT configuration designed for high-efficiency switching applications
- Surface-mount DPAK package optimized for automated assembly processes
- Robust thermal performance supporting operation up to 150 °C junction temperature
Applications
- Motor control systems
- Switch-mode power supplies
- High-frequency inverter circuits
Procurement Notes
Verify component authenticity through authorized distribution channels. Confirm datasheet revisions match design requirements. Ensure storage conditions comply with moisture sensitivity levels. Validate RoHS compliance status prior to integration. Cross-reference pin assignments with schematic diagrams to prevent installation errors.
Selection Notes
Evaluate thermal management capabilities against system heat dissipation limits. Compare saturation voltage specifications for efficiency optimization. Assess switching speed requirements relative to application frequency. Verify package compatibility with existing PCB footprint designs. Consider derating factors for elevated ambient temperatures.
Part Context
This component belongs to the IRG4 series of insulated gate bipolar transistors. The series offers various voltage and current ratings tailored for different power electronics applications. Infineon Technologies provides comprehensive technical documentation for this product line.
Replacement Considerations
Consult official replacement guides for compatible alternatives. Verify electrical parameters match original specifications. Check package dimensions for mechanical fit. Review manufacturer recommendations for direct substitutes.
