IRG4RC20FTRPBF

Overview

The IRG4RC20FTRPBF is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies, formerly International Rectifier. It features a maximum collector-emitter voltage of 600V and a continuous collector current of 14A at 25°C. The device utilizes the Field-Stop technology for optimized switching performance in the 1-8kHz frequency range. It is housed in a surface-mount DPAK package with three pins. Key electrical parameters include a maximum gate-emitter voltage of ±20V, a typical saturation voltage of 1.9V at 14A, and a turn-off tail time of 130ns. The component operates within a junction temperature range of -55°C to +150°C.

Feature Summary

• Integrates an IGBT with an ultrafast soft recovery diode for efficient power switching.
• Utilizes Field-Stop trench technology to minimize switching losses and improve thermal stability.
• Designed for high reliability with robust short-circuit capability.

Applications

• High-frequency motor drives and inverters
• Switched-mode power supplies (SMPS)
• DC-DC converters

Procurement Notes

Verify the manufacturer designation carefully, as the part may be listed under Infineon Technologies rather than International Rectifier due to corporate acquisition. Confirm the specific suffix 'TRPBF' indicates tape-and-reel packaging and lead-free compliance. Check for end-of-life status or obsolescence notices from the original manufacturer documentation before finalizing procurement plans.

Selection Notes

Select this component for applications requiring low conduction losses and fast switching speeds in the 600V voltage class. Ensure the thermal management design accommodates the power dissipation characteristics defined in the datasheet. Verify that the drive circuitry can handle the gate charge requirements without exceeding the maximum gate-emitter voltage limits during transient conditions.

Part Context

This device belongs to the IRG4RC series of Fast IGBTs, which are engineered for medium-power applications. The series combines the high input impedance of MOSFETs with the low on-state voltage drop of bipolar transistors. The DPAK package provides a compact solution for surface-mount assembly, balancing thermal performance with board space constraints in consumer and industrial electronics.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult official Infineon replacement guides for equivalent Field-Stop technology IGBTs in the DPAK package with matching voltage and current ratings.