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Product Detailed Parameters
- Description：IGBT MOD 1200V 285A POWIR 62
- Series：-
- Mfr：Infineon Technologies
- Package：Box
- IGBT Type：-
- Configuration：Half Bridge
- Vce(on) (Max) @ Vge, Ic：3.5V @ 15V, 200A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：POWIR® 62 Module
- Supplier Device Package：POWIR® 62
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：285 A
- Power - Max：1250 W
- Current - Collector Cutoff (Max)：3 mA
- Input Capacitance (Cies) @ Vce：22.7 nF @ 25 V
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Overview
The IRG5U200HF12B is a half-bridge IGBT module in the POWIR 62™ package, rated for 1200 V collector-emitter voltage and 200 A continuous collector current at 80°C case temperature. It features a short-circuit safe operating area of 10 µs and a maximum junction temperature of 150°C. The IGBT saturation voltage is 3.20 V at 200 A and 25°C, while the integrated freewheeling diode exhibits a forward voltage of 2.20 V under identical conditions. Thermal resistance from junction to case is 0.100 °C/W for the IGBT and 0.204 °C/W for the diode.
Feature Summary
- Low on-state voltage and switching losses for high efficiency
- Rugged transient performance with tested reverse bias safe operating area
- 10 µsec short circuit safe operating area capability
- POWIR 62™ industry standard package design
Applications
- Industrial Motor Drive
- Uninterruptible Power Supply
- Welding and Cutting Machine
- Switched Mode Power Supply
- Induction Heating
Procurement Notes
Verify the specific ordering suffix against official manufacturer documentation before procurement. Confirm that the component matches the required industrial qualification level and RoHS compliance status. Ensure thermal interface materials are compatible with the specified mounting torque values for the M6 power and mounting screws to maintain optimal thermal conductivity.
Selection Notes
Select this module for applications requiring robust short-circuit tolerance and high current density in a standardized footprint. Evaluate the gate resistance requirements to balance switching speed against electromagnetic interference. Consider the thermal impedance characteristics when designing heatsinking solutions to ensure the junction temperature remains within the specified operational range during peak load cycles.
Part Context
This component belongs to the POWIR series of insulated gate bipolar transistor modules. It integrates an IGBT chip with a complementary fast recovery freewheeling diode in a single encapsulated unit. The design targets medium to high-power conversion systems where reliability and compact form factors are critical for system integration.
Replacement Considerations
Direct substitutes include the IRG5K50P5K50PM06E based on shared datasheet references. Verify pin compatibility and electrical parameters before substitution.
FAQ
What is the maximum short-circuit duration the module can withstand?
The module supports a short-circuit duration of 10 microseconds.
What is the isolation voltage rating between terminals?
The isolation voltage is rated at 2500 Vrms for one minute at 50 Hz with all terminals shorted.
How does the gate threshold voltage vary with temperature?
The gate threshold voltage is specified between 4.5 V and 6.0 V at 25°C, typically decreasing as temperature increases.
