IRG6I320UPBF

Description：IGBT TRENCH 330V 24A TO-220AB
Series：-

SKU:2db0f719df2a Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH 330V 24A TO-220AB
Series：-
Mfr：Infineon Technologies
Package：Tube
IGBT Type：Trench
Voltage - Collector Emitter Breakdown (Max)：330 V
Current - Collector (Ic) (Max)：24 A
Current - Collector Pulsed (Icm)：-
Vce(on) (Max) @ Vge, Ic：1.65V @ 15V, 24A
Power - Max：39 W
Switching Energy：-
Input Type：Standard
Gate Charge：46 nC
Td (on/off) @ 25°C：24ns/89ns
Test Condition：196V, 12A, 10Ohm
Reverse Recovery Time (trr)：-
Operating Temperature：-40°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-220-3
Supplier Device Package：TO-220AB
Grade：-
Qualification：-

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IRG6I320UPBF

Overview

The IRG6I320UPbF is a discrete n-channel IGBT utilizing advanced trench technology, designed for Plasma Display Panel (PDP) applications. It features a collector-emitter breakdown voltage of 330 V and a continuous collector current rating of 12 A at 25°C case temperature. The device supports a maximum repetitive peak current of 160 A and operates up to a junction temperature of 150°C. Key electrical parameters include a typical saturation voltage of 1.45 V at 24 A and a total gate charge of 46 nC. The component is housed in a TO-220AB Full-Pak package with a thermal resistance from junction to case of 3.2 °C/W.

Feature Summary

Advanced trench IGBT technology optimized for sustain and energy recovery circuits in PDP applications
Low on-state voltage and Energy per Pulse rating to improve panel efficiency
High repetitive peak current capability for robust operation
Lead-free package construction

Applications

Plasma Display Panel (PDP) sustain circuits
Energy recovery circuits in display panels

Procurement Notes

Verify the specific ordering suffix 'UPbF' against the manufacturer's official documentation to confirm lead-free status and RoHS compliance. Ensure the procurement channel provides valid traceability for industrial market components. Confirm that the TO-220AB Full-Pak package matches the mechanical requirements of the target assembly, as surface mount application is not recommended for this package type.

Selection Notes

Select this component when designing PDP sustain drivers requiring low switching losses and high pulse current handling. The 330 V rating suits specific bus voltage levels common in older PDP architectures. Consider the 150°C junction temperature limit for thermal management calculations. Verify that the required gate drive voltage aligns with the specified threshold characteristics for optimal conduction performance.

Part Context

This device belongs to the family of trench IGBTs developed for display technologies. It represents an optimization for energy efficiency in plasma displays by reducing power dissipation during pulsed operation. The TO-220AB Full-Pak package provides a cost-effective solution for through-hole mounting in industrial electronics where high current pulses are intermittent but significant.