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Product Detailed Parameters
- Description：IGBT TRENCH 1000V 55A TO-247AD
- Series：-
- Mfr：International Rectifier
- Package：Bulk
- IGBT Type：Trench
- Voltage - Collector Emitter Breakdown (Max)：1000 V
- Current - Collector (Ic) (Max)：55 A
- Current - Collector Pulsed (Icm)：60 A
- Vce(on) (Max) @ Vge, Ic：2.2V @ 15V, 20A
- Power - Max：210 W
- Switching Energy：1.06mJ (on), 620µJ (off)
- Input Type：Standard
- Gate Charge：85 nC
- Td (on/off) @ 25°C：30ns/160ns
- Test Condition：600V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AD
- Grade：-
- Qualification：-
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Overview
The IRG7PG35U-EPBF is an Insulated Gate Bipolar Transistor (IGBT) manufactured by International Rectifier. It utilizes low VCE(on) trench IGBT technology to achieve low switching losses and high efficiency across a wide range of applications. The device features a maximum junction temperature of 175 °C, a square Reverse Biased Safe Operating Area (RBSOA), and 100% testing for Integrated Loop Inductance (ILM). It exhibits a positive VCE(on) temperature coefficient and tight parameter distribution, ensuring excellent current sharing in parallel operation.
Feature Summary
- Low VCE(on) trench IGBT technology
- Low switching losses
- Maximum junction temperature of 175 °C
- Square RBSOA
Applications
- UPS systems
- Welding equipment
- Solar inverters
- Induction heating
Procurement Notes
Verify the exact part number against official manufacturer documentation to ensure compatibility with system requirements. Confirm that the component meets all necessary safety and performance standards for the intended application environment. Cross-reference datasheet specifications with design constraints before procurement.
Selection Notes
Select this component for applications requiring high efficiency and rugged transient performance. Consider its suitability for wide switching frequency ranges due to low conduction and switching losses. Ensure thermal management aligns with the 175 °C maximum junction temperature specification.
Part Context
This IGBT belongs to the IRG7PH series from International Rectifier, designed for high-performance power switching. It shares technological similarities with other trench IGBTs in the lineup, offering improved reliability and current sharing capabilities compared to older generation devices.
Replacement Considerations
Potential substitutes include IRG7PH35UD-EP and IRG7PH35UD1-EP. Verify pinout compatibility and electrical parameters such as voltage ratings and current handling capabilities before substitution. Consult official cross-reference guides for confirmed alternatives.
