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The IRG7PG35UPBF is an Insulated Gate Bipolar Transistor (IGBT) manufactured by International Rectifier. It utilizes low VCE(on) trench IGBT technology to achieve low switching losses and high efficiency across a wide range of applications. The device features a maximum junction temperature of 175 °C, a square Reverse Bias Safe Operating Area (RBSOA), and a positive VCE(on) temperature coefficient. All parts are tested for Integrated Level Monitoring (ILM) with tight parameter distribution, ensuring excellent current sharing in parallel operation. The component is lead-free and RoHS6 compliant.
Verify the exact suffix against official manufacturer documentation to confirm compliance status and specific testing levels. Ensure the component matches the required package type and thermal characteristics for the target design. Cross-reference the part number with the latest datasheet revisions to confirm availability and any potential obsolescence notices from the manufacturer.
Select this IGBT for applications requiring rugged transient performance and high efficiency. The positive temperature coefficient facilitates reliable parallel operation for higher current handling. Consider the maximum junction temperature rating when designing thermal management solutions for industrial power systems.
This component belongs to the IRG7PH series of IGBTs from International Rectifier. It shares similar technological foundations with variants like the IRG7PH35U-EP, focusing on trench technology for improved switching performance and reduced conduction losses in power conversion circuits.
Direct substitutes include other trench IGBTs with comparable voltage and current ratings from the same manufacturer family. Verify pin compatibility and thermal resistance values before replacing. Consult the manufacturer's selection guide for equivalent devices with similar switching speeds and safe operating area characteristics.