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The IRG7PH28UD1MPBF is a 1200V n-channel Insulated Gate Bipolar Transistor (IGBT) with an integrated ultra-low forward voltage diode, manufactured by Infineon Technologies. It utilizes low VCE(ON) trench IGBT technology to achieve low switching losses and high efficiency. The device features a TO-247AD package and supports a maximum collector current of 30A at 25°C case temperature, or 15A at 100°C. It offers a typical VCE(ON) of 1.95V at 15A and 25°C, with a peak repetitive transient voltage capacity of 1300V.
Verify the specific ordering suffix 'MPBF' corresponds to the TO-247AD package variant as documented in official datasheets. Confirm RoHS compliance status and industrial qualification level requirements match your design specifications before finalizing procurement orders.
Select this component when high reliability under transient conditions is required due to its square RBSOA. The positive temperature coefficient ensures stable current sharing in parallel configurations. Ensure thermal management accommodates the specified junction-to-case thermal resistance values for optimal performance.
This part belongs to the IRG7P series of high-voltage IGBTs designed for demanding power conversion applications. It represents a transition from International Rectifier products now managed by Infineon Technologies, maintaining established performance metrics for industrial and consumer power electronics markets.
The IRG7PH28UD1PbF serves as a direct functional substitute using the TO-247AC package instead of TO-247AD. Verify mechanical footprint compatibility between package types before substitution.
The device supports a peak repetitive transient collector-to-emitter voltage of 1300V.
The device features a positive VCE(ON) temperature coefficient, which facilitates safe parallel operation.
The maximum clamped inductive load current (ILM) is rated at 60A under specified test conditions.