IRG7PH28UD1MPBF

IRG7PH28UD1MPBF

  • Description:IGBT TRENCH 1200V 30A TO-247AD
  • Series:-

SKU:5f7e429fdcc0 Category: Brand:

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Product Detailed Parameters

  • Description:IGBT TRENCH 1200V 30A TO-247AD
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tube
  • IGBT Type:Trench
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):30 A
  • Current - Collector Pulsed (Icm):100 A
  • Vce(on) (Max) @ Vge, Ic:2.3V @ 15V, 15A
  • Power - Max:115 W
  • Switching Energy:543µJ (off)
  • Input Type:Standard
  • Gate Charge:90 nC
  • Td (on/off) @ 25°C:-/229ns
  • Test Condition:600V, 15A, 22Ohm, 15V
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247AD
  • Grade:-
  • Qualification:-

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IRG7PH28UD1MPBF

Overview

The IRG7PH28UD1MPBF is a 1200V n-channel Insulated Gate Bipolar Transistor (IGBT) with an integrated ultra-low forward voltage diode, manufactured by Infineon Technologies. It utilizes low VCE(ON) trench IGBT technology to achieve low switching losses and high efficiency. The device features a TO-247AD package and supports a maximum collector current of 30A at 25°C case temperature, or 15A at 100°C. It offers a typical VCE(ON) of 1.95V at 15A and 25°C, with a peak repetitive transient voltage capacity of 1300V.

Feature Summary

  • Low VCE(ON) trench IGBT technology for reduced conduction losses
  • Ultra-low forward voltage diode for improved efficiency
  • Square Reverse Bias Safe Operating Area (RBSOA) for rugged performance
  • Positive VCE(ON) temperature coefficient for excellent parallel operation

Applications

  • Induction heating systems
  • Soft switching power supplies
  • High-efficiency inverter circuits

Procurement Notes

Verify the specific ordering suffix 'MPBF' corresponds to the TO-247AD package variant as documented in official datasheets. Confirm RoHS compliance status and industrial qualification level requirements match your design specifications before finalizing procurement orders.

Selection Notes

Select this component when high reliability under transient conditions is required due to its square RBSOA. The positive temperature coefficient ensures stable current sharing in parallel configurations. Ensure thermal management accommodates the specified junction-to-case thermal resistance values for optimal performance.

Part Context

This part belongs to the IRG7P series of high-voltage IGBTs designed for demanding power conversion applications. It represents a transition from International Rectifier products now managed by Infineon Technologies, maintaining established performance metrics for industrial and consumer power electronics markets.

Replacement Considerations

The IRG7PH28UD1PbF serves as a direct functional substitute using the TO-247AC package instead of TO-247AD. Verify mechanical footprint compatibility between package types before substitution.

FAQ

What is the peak repetitive transient collector-to-emitter voltage?

The device supports a peak repetitive transient collector-to-emitter voltage of 1300V.

Does the IGBT exhibit a positive or negative temperature coefficient for VCE(ON)?

The device features a positive VCE(ON) temperature coefficient, which facilitates safe parallel operation.

What is the maximum clamped inductive load current rating?

The maximum clamped inductive load current (ILM) is rated at 60A under specified test conditions.

IRG7PH28UD1MPBFIRG7PH28UD1MPBF

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