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The IRG7PH28UD1PBF is an Insulated Gate Bipolar Transistor (IGBT) with a built-in ultra-low forward voltage diode, manufactured by International Rectifier. It is designed for induction heating and soft switching applications. The device features a collector-emitter breakdown voltage of 600V and a continuous collector current of 45A at 25°C. Key electrical parameters include a maximum gate-emitter threshold voltage of 4.5V and a typical on-state voltage of 2.3V at rated current. The component operates within a junction temperature range of -40°C to +175°C and utilizes a TO-247AD package.
Verify the manufacturer datasheet revision and specific ordering suffixes to ensure compatibility with required thermal and electrical specifications. Confirm RoHS compliance status and packaging type upon order placement. Cross-reference part numbers with Infineon documentation following the acquisition of International Rectifier assets to validate current production status and availability channels.
Select this component for applications requiring low conduction losses in resonant or soft-switching environments. Ensure the drive circuit can handle the specified gate charge and threshold voltage. Verify that the system's thermal management design supports the 175°C maximum junction temperature rating under expected load conditions.
This IGBT belongs to the PH series from International Rectifier, characterized by ultra-fast recovery diodes and low on-state voltage. The series targets high-frequency power conversion where switching losses are critical. International Rectifier was acquired by Infineon Technologies, and these parts are now managed under the Infineon portfolio.
Consult official Infineon replacement guides for cross-references. Potential substitutes may include other IRG7PHxxUD1 variants with adjusted current ratings or voltage classes. Verify pinout compatibility and thermal resistance values before substitution.