IRG7PH30K10PBF

Description：IGBT TRENCH 1200V 33A TO-247AC
Series：-

SKU:a9c94e77fcf5 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH 1200V 33A TO-247AC
Series：-
Mfr：Infineon Technologies
Package：Tube
IGBT Type：Trench
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：33 A
Current - Collector Pulsed (Icm)：27 A
Vce(on) (Max) @ Vge, Ic：2.35V @ 15V, 9A
Power - Max：210 W
Switching Energy：530µJ (on), 380µJ (off)
Input Type：Standard
Gate Charge：45 nC
Td (on/off) @ 25°C：14ns/110ns
Test Condition：600V, 9A, 22Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247AC
Grade：-
Qualification：-

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IRG7PH30K10PBF

Overview

The IRG7PH30K10PbF is a 1200V n-channel Insulated Gate Bipolar Transistor in a TO-247AC package. It features Trench IGBT technology with a typical VCE(on) of 2.05V at IC=9.0A and VGE=15V. The device supports a continuous collector current of 33A at 25°C case temperature, reducing to 23A at 100°C. Maximum junction temperature is 175°C, with a short-circuit withstand time of 10µs.

Feature Summary

Low VCE(on) Trench IGBT Technology
Square RBSOA
Positive VCE(on) Temperature Co-Efficient

Applications

Industrial motor drives
Switch-mode power supplies
High-efficiency inverters

Procurement Notes

Verify the component matches the exact part number IRG7PH30K10PBF. Confirm the manufacturer is Infineon Technologies or its predecessor IRF. Check for RoHS compliance and lead-free status as specified in the datasheet. Ensure the package is TO-247AC. Validate that the device is intended for industrial market applications.

Selection Notes

Select this component for high-voltage switching applications requiring low conduction losses. Consider the thermal resistance and power dissipation limits when designing heat sinks. Evaluate the switching speed and gate charge requirements against the driver circuit capabilities. Ensure the operating voltage does not exceed the 1200V rating under all transient conditions.

Part Context

This is an n-channel IGBT designed for industrial applications. It belongs to the PH series from Infineon Technologies (formerly International Rectifier). The device utilizes trench gate technology to achieve low saturation voltage and improved switching performance compared to older planar technologies.