IRG7PH35U-EPBF

IRG7PH35U-EPBF

  • Description:IGBT 1200V ULTRA FAST TO247
  • Series:-

SKU:2056021b0894 Category: Brand:

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Product Detailed Parameters

  • Description:IGBT 1200V ULTRA FAST TO247
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tube
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):-
  • Current - Collector (Ic) (Max):-
  • Current - Collector Pulsed (Icm):-
  • Vce(on) (Max) @ Vge, Ic:-
  • Power - Max:-
  • Switching Energy:-
  • Input Type:-
  • Gate Charge:-
  • Td (on/off) @ 25°C:-
  • Test Condition:-
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

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IRG7PH35U-EPBF

Overview

The IRG7PH35U-EPBF is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It utilizes low VCE(on) trench IGBT technology and features an integrated ultrafast soft recovery diode. The device is rated for a collector-emitter voltage of 1200 V and a continuous collector current of 50 A. Key electrical parameters include a maximum power dissipation of 180 W, a reverse recovery time of 105 ns, and a maximum junction temperature of 175 °C. It is housed in a TO-247AD package with three pins.

Feature Summary

  • Low VCE(on) trench IGBT technology for high efficiency
  • Integrated ultrafast soft recovery diode
  • Positive VCE(on) temperature coefficient for parallel operation
  • Square RBSOA for rugged transient performance

Applications

  • Uninterruptible Power Supplies (UPS)
  • Welding equipment
  • Solar inverters
  • Induction heating systems

Procurement Notes

Verify the specific suffix against official datasheets to confirm pinout and thermal characteristics. Ensure the component meets required automotive or industrial qualification standards if applicable. Confirm lead-free status and RoHS compliance through manufacturer documentation before integration into designs.

Selection Notes

Select this component for applications requiring high switching frequencies and low conduction losses. The positive temperature coefficient facilitates reliable parallel operation for higher current handling. Consider the TO-247AD package for adequate heat dissipation in medium-power scenarios.

Part Context

This part belongs to the IRG7PH series of IGBTs from Infineon. It is designed to offer a balance between low conduction voltage drop and fast switching speeds. The EP designation typically indicates enhanced performance or specific reliability attributes compared to standard variants within the family.

Replacement Considerations

Check for direct equivalents such as the IRG7PH35UD-EP. Verify that any substitute maintains the same 1200V rating, 50A current capacity, and TO-247 package form factor to ensure mechanical and electrical compatibility.

IRG7PH35U-EPBFIRG7PH35U-EPBF

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