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Product Detailed Parameters
- Description：IGBT TRENCH 1200V 50A TO-247AD
- Series：-
- Mfr：International Rectifier
- Package：Bulk
- IGBT Type：Trench
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：50 A
- Current - Collector Pulsed (Icm)：150 A
- Vce(on) (Max) @ Vge, Ic：2.2V @ 15V, 20A
- Power - Max：179 W
- Switching Energy：620µJ (off)
- Input Type：Standard
- Gate Charge：130 nC
- Td (on/off) @ 25°C：-/160ns
- Test Condition：600V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AD
- Grade：-
- Qualification：-
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Overview
The IRG7PH35UD1MPBF is an N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by International Rectifier, now part of Infineon Technologies. It utilizes low VCE(on) trench IGBT technology and features an integrated ultra-low forward voltage drop diode. The device is rated for a collector-emitter voltage of 1200V and a continuous collector current of 50A at 25°C. It operates within a junction temperature range of -55°C to +150°C and has a maximum power dissipation of 180W in a TO-247AD package.
Feature Summary
- Optimized for induction heating and soft switching applications through low switching losses and high efficiency.
- Features square Reverse Bias Safe Operating Area (RBSOA) and positive VCE(on) temperature coefficient for reliable parallel operation.
- Includes an ultra-low VF diode and supports 1300Vpk repetitive transient capacity for rugged performance.
Applications
- Induction heating systems
- Soft switching power converters
- High-frequency inverters
Procurement Notes
Verify the manufacturer source carefully as International Rectifier was acquired by Infineon. Confirm the suffix MPBF indicates lead-free compliance and tape-and-reel packaging if required. Ensure the component matches the specific IRG7PH35UD1EP family specifications regarding parameter distribution and testing standards.
Selection Notes
Select this component when designing circuits requiring high voltage blocking capability with low conduction losses. The integrated diode makes it suitable for half-bridge configurations where fast recovery characteristics are needed. Consider the thermal resistance of the TO-247AD package for heat sink design.
Part Context
This part belongs to the IRG7PH35UD series of IGBTs designed specifically for high-efficiency power conversion. The 'MPBF' suffix typically denotes a specific packaging variant, often tape and reel, distinct from the standard PBF or UD variants found in retail distributors.
Replacement Considerations
Direct replacements include other 1200V/50A trench IGBTs with integrated diodes from Infineon or competitors like Mitsubishi and Fuji Electric. Verify pinout compatibility and ensure the replacement device meets the same RBSOA and thermal requirements for the specific application.
