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The IRG7PH35UPBF is an N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by International Rectifier. It utilizes low VCE(on) trench IGBT technology to achieve low switching losses and high efficiency across a wide range of applications. The device features a maximum junction temperature of 175 °C and exhibits a positive VCE(on) temperature coefficient, which facilitates excellent current sharing in parallel operation. It includes a built-in ultrafast soft recovery diode and maintains a square Reverse Bias Safe Operating Area (RBSOA). All units are tested for Integrated Layer Monitoring (ILM) to ensure rugged transient performance.
Verify the exact suffix against official datasheets, as variations like 'UD' or 'EP' indicate specific internal diode characteristics or environmental compliance levels. Confirm RoHS status and package type directly with the manufacturer or authorized distributors to ensure compatibility with existing thermal management designs.
Select this component for designs requiring high reliability and efficient power conversion at moderate frequencies. The positive temperature coefficient is critical for paralleling multiple devices without active current balancing circuits. Ensure the application voltage remains within the specified collector-emitter breakdown limits to maintain the square RBSOA integrity.
This part belongs to the IRG7P family of trench IGBTs from International Rectifier, now part of Infineon Technologies. The series is engineered for general-purpose hard-switching applications where low conduction and switching losses are prioritized. It represents a standard discrete solution for medium-power industrial and consumer electronics.
Cross-reference with the IRG7PH35UD-EP for environmentally compliant versions or other IRG7P series variants. Verify pinout compatibility and thermal resistance parameters before substitution. Consult official replacement lists for updated packaging or lead-free specifications.