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The IRG7PH42UD1-EP is an N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current rating of 90 A. The device is housed in a TO-247AD package with three pins for through-hole mounting. It operates within a temperature range of -55 °C to +175 °C and supports switching frequencies between 8 kHz and 30 kHz. The component includes an integrated ultra-low forward voltage diode, designed specifically for induction heating and soft switching applications.
Verify the exact suffix designation against the manufacturer's official datasheet to confirm pinout compatibility and specific electrical tolerances. Ensure that the procurement channel provides traceable documentation confirming the component originates from authorized Infineon distribution channels to guarantee authenticity and performance reliability.
Select this component when designing circuits requiring high-voltage handling combined with low-diode conduction losses. It is suitable for applications demanding robust thermal performance and precise control over switching transitions in high-power density environments where standard IGBTs may exhibit higher reverse recovery losses.
This part belongs to the IRG7PH series of insulated gate bipolar transistors. The series is characterized by its optimization for high-efficiency power switching. The 'EP' suffix typically denotes enhanced product or specific manufacturing lot characteristics defined by the original manufacturer, International Rectifier, prior to its acquisition by Infineon.
Consult official cross-reference lists for direct substitutes such as the IRG7PH42UD1PBF. Verify that any alternative maintains identical voltage ratings, current capabilities, and package dimensions to ensure mechanical and electrical compatibility without circuit redesign.