IRG7PH42UD1-EP

IRG7PH42UD1-EP

  • Description:IGBT TRENCH 1200V 85A TO-247AD
  • Series:-

SKU:b936c9b705ae Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:IGBT TRENCH 1200V 85A TO-247AD
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tube
  • IGBT Type:Trench
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):85 A
  • Current - Collector Pulsed (Icm):200 A
  • Vce(on) (Max) @ Vge, Ic:2V @ 15V, 30A
  • Power - Max:313 W
  • Switching Energy:1.21mJ (off)
  • Input Type:Standard
  • Gate Charge:180 nC
  • Td (on/off) @ 25°C:-/270ns
  • Test Condition:600V, 30A, 10Ohm, 15V
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247AD
  • Grade:-
  • Qualification:-

Download product information

IRG7PH42UD1-EP

Overview

The IRG7PH42UD1-EP is an N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current rating of 90 A. The device is housed in a TO-247AD package with three pins for through-hole mounting. It operates within a temperature range of -55 °C to +175 °C and supports switching frequencies between 8 kHz and 30 kHz. The component includes an integrated ultra-low forward voltage diode, designed specifically for induction heating and soft switching applications.

Feature Summary

  • Integrated ultra-low forward voltage diode optimized for specific power conversion topologies
  • Engineered specifically for induction heating and soft switching operational environments
  • High thermal stability supporting extended junction temperature ranges up to 175 °C

Applications

  • Induction heating systems
  • Soft switching power converter circuits
  • High-frequency inverter modules

Procurement Notes

Verify the exact suffix designation against the manufacturer's official datasheet to confirm pinout compatibility and specific electrical tolerances. Ensure that the procurement channel provides traceable documentation confirming the component originates from authorized Infineon distribution channels to guarantee authenticity and performance reliability.

Selection Notes

Select this component when designing circuits requiring high-voltage handling combined with low-diode conduction losses. It is suitable for applications demanding robust thermal performance and precise control over switching transitions in high-power density environments where standard IGBTs may exhibit higher reverse recovery losses.

Part Context

This part belongs to the IRG7PH series of insulated gate bipolar transistors. The series is characterized by its optimization for high-efficiency power switching. The 'EP' suffix typically denotes enhanced product or specific manufacturing lot characteristics defined by the original manufacturer, International Rectifier, prior to its acquisition by Infineon.

Replacement Considerations

Consult official cross-reference lists for direct substitutes such as the IRG7PH42UD1PBF. Verify that any alternative maintains identical voltage ratings, current capabilities, and package dimensions to ensure mechanical and electrical compatibility without circuit redesign.

IRG7PH42UD1-EPIRG7PH42UD1-EP

Click on the inquiry