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Product Detailed Parameters
- Description：IGBT TRENCH 1200V 90A TO-247AC
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：Trench
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：90 A
- Current - Collector Pulsed (Icm)：90 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 30A
- Power - Max：385 W
- Switching Energy：2.11mJ (on), 1.18mJ (off)
- Input Type：Standard
- Gate Charge：157 nC
- Td (on/off) @ 25°C：25ns/229ns
- Test Condition：600V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AC
- Grade：-
- Qualification：-
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Overview
The IRG7PH42UPbF is an N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a maximum collector-to-emitter voltage of 1200 V and a continuous collector current rating of 90 A at 25°C case temperature, or 60 A at 100°C. The device utilizes low VCE(on) trench IGBT technology to achieve a typical saturation voltage of 1.7 V at 30 A. It supports a maximum junction temperature of 175 °C and offers low switching losses with a square Reverse Bias Safe Operating Area (RBSOA).
Feature Summary
- Low VCE(on) trench IGBT technology for high efficiency.
- Square RBSOA for rugged transient performance.
- Positive VCE(on) temperature coefficient for excellent current sharing in parallel operation.
Applications
- Uninterruptible Power Supplies (UPS)
- Welding equipment
- Solar inverters
- Induction heating
Procurement Notes
Verify the specific package variant upon ordering, as the datasheet distinguishes between TO-247AC and TO-247AD packages. Confirm that the component meets Industrial market qualification standards. Ensure the gate drive circuitry aligns with the specified electrical characteristics for optimal switching performance.
Selection Notes
Select this component for applications requiring high voltage blocking capability and robust short-circuit withstand ability. The positive temperature coefficient facilitates safe parallel operation without active current balancing. Consider thermal management requirements carefully given the power dissipation ratings at elevated case temperatures.
Part Context
This part belongs to the IRG7PH series of high-voltage IGBTs from Infineon. It is designed for industrial applications demanding high reliability and efficiency. The product line emphasizes low switching losses and high current density within standard through-hole packages suitable for heatsink mounting.
Replacement Considerations
The IRG7PH42U-EP is documented as a related variant within the same datasheet family. Verify pinout compatibility and exact electrical parameter tolerances before substitution.
FAQ
Is the TO-247AC package recommended for surface mount applications?
No, the datasheet explicitly states that the TO-247AC package is not recommended for surface mount applications.
What is the maximum clamped inductive load current?
The maximum clamped inductive load current (ILM) is 120 A when the gate-to-emitter voltage is 20 V.
Does the device exhibit a positive or negative temperature coefficient for VCE(on)?
The device has a positive VCE(on) temperature coefficient, which aids in current sharing during parallel operation.
