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Product Detailed Parameters
- Description：IGBT 1200V 70A TO-247AD
- Series：-
- Mfr：International Rectifier
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：70 A
- Current - Collector Pulsed (Icm)：100 A
- Vce(on) (Max) @ Vge, Ic：2.4V @ 15V, 25A
- Power - Max：320 W
- Switching Energy：2.1mJ (on), 1.3mJ (off)
- Input Type：Standard
- Gate Charge：200 nC
- Td (on/off) @ 25°C：75ns/315ns
- Test Condition：600V, 25A, 10Ohm, 15V
- Reverse Recovery Time (trr)：130 ns
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AD
- Grade：-
- Qualification：-
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Overview
The IRG7PH44K10D-EPBF is an Insulated Gate Bipolar Transistor (IGBT) manufactured by International Rectifier, now part of Infineon Technologies. This component belongs to the high-performance PH series, designed for demanding power conversion applications. It features a field-stop trench technology that optimizes the trade-off between conduction and switching losses. The device integrates an ultra-fast soft recovery anti-parallel diode, eliminating the need for external series diodes in many topologies. Key electrical ratings include a collector-emitter voltage of 1200V and a continuous collector current capability suitable for industrial motor drives and uninterruptible power supply systems.
Feature Summary
- Field-stop trench IGBT technology for reduced switching and conduction losses
- Integrated ultra-fast soft recovery anti-parallel diode
- High short-circuit withstand time for robust system protection
- Flange-mount package design for efficient thermal management
Applications
- Industrial motor drives and servo amplifiers
- Uninterruptible power supplies (UPS)
- Induction heating systems
- Soft-switching DC-DC converters
Procurement Notes
Verify the manufacturer date code and lot traceability when sourcing this component, as it carries an EP suffix indicating enhanced product specifications. Confirm RoHS compliance status through the official datasheet or supplier certification documents, as older batches may differ. Ensure the flange mount surface is inspected for integrity prior to installation to maintain proper thermal interface performance.
Selection Notes
Select this device for applications requiring high reliability and fast switching speeds in medium-to-high power ranges. The integrated diode simplifies circuit design by reducing component count and parasitic inductance. Consider the thermal resistance characteristics of the flange mount package when designing the heatsink interface. Ensure gate drive voltages remain within the specified safe operating area to prevent latch-up or excessive switching losses.
Part Context
This component is part of the IRG7PH series from International Rectifier, a line known for combining high voltage capability with low loss characteristics. The EP designation typically denotes an enhanced product variant with stricter manufacturing controls or specific electrical parameter tolerances compared to standard commercial grades. The series is widely recognized in industrial power electronics for its balance of performance and ruggedness.
Replacement Considerations
Direct pin-compatible replacements within the same family include the IRG7PH42UD1PBF and IRG7PH35UD1PBF, which share similar packaging and application profiles. When substituting, verify that the replacement device meets or exceeds the required 1200V blocking voltage and current handling capabilities. Always review the updated datasheet for any changes in thermal resistance or switching timing parameters before finalizing the design.
