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The IRG7PH46UPBF is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It utilizes low VCE(on) trench IGBT technology to achieve high efficiency and low switching losses. The device features a maximum junction temperature of 175°C, a square Reverse Bias Safe Operating Area (RBSOA), and positive VCE(on) temperature coefficient for excellent current sharing in parallel operation. It is housed in a TO-247AC package.
Verify the specific ordering suffix against official documentation to confirm compliance with RoHS standards and lead-free status. Ensure the package type matches the application requirements, as the TO-247AC package is not recommended for surface mount applications. Confirm that the component meets industrial market qualification standards before integration into designs.
Select this component for applications requiring rugged transient performance and high reliability. The positive temperature coefficient facilitates safe parallel operation without additional balancing components. Consider the thermal resistance characteristics and power dissipation limits relative to the case temperature when designing the heat sinking solution.
This part belongs to the IRG7PH series of IGBTs from Infineon Technologies. It is designed for industrial applications where high efficiency and wide switching frequency ranges are required. The device is distinct from diode-clamped variants within the same family.
Consult official datasheets for cross-referencing with other IGBT models. Verify electrical parameters such as collector current, voltage ratings, and package dimensions before substituting any alternative components.
No, the TO-247AC package used for this component is not recommended for surface mount applications.
The maximum operating junction temperature is 175°C.
Yes, the positive VCE(on) temperature coefficient ensures excellent current sharing in parallel operation.