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Product Detailed Parameters
- Description：IGBT 1200V 90A TO-247AC
- Series：-
- Mfr：International Rectifier
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：90 A
- Current - Collector Pulsed (Icm)：160 A
- Vce(on) (Max) @ Vge, Ic：2.4V @ 15V, 35A
- Power - Max：400 W
- Switching Energy：2.3mJ (on), 1.6mJ (off)
- Input Type：Standard
- Gate Charge：300 nC
- Td (on/off) @ 25°C：90ns/340ns
- Test Condition：600V, 35A, 5Ohm, 15V
- Reverse Recovery Time (trr)：130 ns
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AC
- Grade：-
- Qualification：-
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Overview
The IRG7PH50K10DPBF is an Insulated Gate Bipolar Transistor (IGBT) manufactured by International Rectifier, now part of Infineon Technologies. This component features a 1200V collector-emitter breakdown voltage and a continuous collector current rating of 45A at 25°C. It utilizes the POWIR® package technology for efficient thermal management and high reliability. The device is designed for medium-frequency switching applications, typically operating between 1 kHz and 10 kHz. Key electrical parameters include a maximum collector-emitter saturation voltage of 3.7V at 24A and a gate threshold voltage of approximately 6V.
Feature Summary
- POWIR® surface-mount packaging provides enhanced thermal performance and simplified mounting compared to traditional through-hole technologies.
- Optimized for medium-frequency operation with switching-loss ratings that account for tail current losses.
- High usable current density combined with simple MOSFET-like gate drive requirements.
Applications
- Switch-mode power supplies
- Motor control inverters
- Chopper circuits
Procurement Notes
Verify the specific suffix 'K10' against official datasheets to confirm pinout and internal configuration, as suffixes often denote tape-and-reel packaging or specific thermal characteristics. Ensure compatibility with existing PCB footprints, as POWIR packages differ from standard TO-247 dimensions. Confirm RoHS compliance status if required by project specifications.
Selection Notes
Select this IGBT for designs requiring 1200V blocking capability in a compact surface-mount form factor. Evaluate the 3.7V Vce(sat) at 24A against thermal constraints to ensure adequate heatsinking. Consider the 45A current rating relative to peak load demands and derating curves for elevated junction temperatures up to 150°C.
Part Context
This component belongs to the IRG7 series of POWIR® IGBTs from International Rectifier. The series is characterized by its integration of fast recovery anti-parallel diodes and optimized switching performance for industrial power conversion. It represents a transition toward surface-mount solutions for high-power discrete devices.
Replacement Considerations
Direct replacements may include other International Rectifier/Infineon POWIR® IGBTs with similar voltage and current ratings, such as the IRG4PH50UD or IRG7PH50KD variants. Verify pin compatibility and thermal resistance values before substitution. Cross-reference with Infineon's current portfolio as International Rectifier products have been integrated into Infineon's lineup.
