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Product Detailed Parameters
- Description：IGBT TRENCH 1200V 140A TO247AD
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：Trench
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：140 A
- Current - Collector Pulsed (Icm)：150 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 50A
- Power - Max：556 W
- Switching Energy：4.6mJ (on), 3.2mJ (off)
- Input Type：Standard
- Gate Charge：440 nC
- Td (on/off) @ 25°C：35ns/430ns
- Test Condition：600V, 50A, 5Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：PG-TO247AD
- Grade：-
- Qualification：-
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Overview
The IRG7PH50U-EP is an n-channel Insulated Gate Bipolar Transistor (IGBT) utilizing low VCE(on) trench technology. It features a maximum collector-to-emitter voltage of 1200V and a continuous collector current of 90A at TC=100°C. The device supports a maximum junction temperature of 175°C and offers a square Reverse Bias Safe Operating Area (RBSOA). Key electrical parameters include a typical VCE(sat) of 1.7V at IC=50A, total switching loss up to 7800µJ, and gate charge of 440nC.
Feature Summary
- Low saturation voltage and switching losses for high efficiency
- Square RBSOA for rugged transient performance
- Positive temperature coefficient for excellent parallel operation current sharing
- Maximum junction temperature rating of 175°C
Applications
- Uninterruptible Power Supplies (UPS)
- Welding equipment
- Solar inverters
- Induction heating systems
Procurement Notes
Verify the component against the official Infineon datasheet specifications to ensure authenticity. Confirm that the part number suffix matches the exact package variant required. Check for RoHS compliance status as indicated in the documentation. Ensure storage conditions meet the specified moisture sensitivity levels. Validate supplier authorization before procurement.
Selection Notes
Select this IGBT for applications requiring high blocking voltage and robust fault tolerance. The positive temperature coefficient facilitates reliable parallel operation without active current balancing. Consider the thermal resistance characteristics when designing heat sinks. Evaluate the switching energy losses against the specific operating frequency requirements of the target circuit.
Part Context
This component belongs to the industrial-grade IGBT portfolio designed for power conversion. It combines bipolar current handling with MOSFET-like drive capabilities. The TO-247AD package provides mechanical stability for through-hole mounting. It is engineered for demanding environments where reliability under high stress is critical.
Replacement Considerations
The IRG7PH50UPbF is a lead-free version within the same family. Verify pinout compatibility and thermal resistance values when substituting. Ensure the replacement meets the same voltage and current ratings.
FAQ
What is the maximum junction temperature?
The maximum operating junction temperature is 175°C.
Does the device support parallel operation?
Yes, it features a positive VCE(on) temperature coefficient which ensures excellent current sharing in parallel configurations.
What is the Reverse Bias Safe Operating Area characteristic?
The device exhibits a full square RBSOA, providing rugged performance under hard-switching conditions.
