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Product Detailed Parameters
- Description：IGBT TRENCH 1200V 140A TO-247AC
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：Trench
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：140 A
- Current - Collector Pulsed (Icm)：150 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 50A
- Power - Max：556 W
- Switching Energy：3.6mJ (on), 2.2mJ (off)
- Input Type：Standard
- Gate Charge：290 nC
- Td (on/off) @ 25°C：35ns/430ns
- Test Condition：600V, 50A, 5Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AC
- Grade：-
- Qualification：-
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Overview
The IRG7PH50UPbF is a single-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It utilizes low VCE(on) trench IGBT technology and features a TO-247AC through-hole package. The device supports a maximum collector-to-emitter voltage of 1200V and a continuous collector current of 90A at a case temperature of 100°C. It operates with a maximum junction temperature of 175°C and includes a positive VCE(on) temperature coefficient for reliable parallel operation.
Feature Summary
- Low saturation voltage and switching losses for high efficiency
- Maximum junction temperature rating of 175°C
- Square Reverse Bias Safe Operating Area (RBSOA)
- Positive temperature coefficient for improved current sharing
Applications
- Uninterruptible Power Supplies (UPS)
- Welding equipment
- Solar inverters
- Induction heating systems
Procurement Notes
Verify the specific ordering suffix to confirm lead-free status and package variant. Confirm that the TO-247AC package is suitable for your mounting requirements, as it is not recommended for surface mount applications. Ensure gate drive parameters align with the specified VGE limits and switching loss conditions found in the datasheet.
Selection Notes
Select this component for industrial applications requiring rugged transient performance and high reliability. The square RBSOA ensures safe operation under clamped inductive load conditions. Consider the thermal resistance characteristics when designing heat sinks, noting the power dissipation ratings vary significantly between 25°C and 100°C case temperatures.
Part Context
This IGBT belongs to the IRG7 series, designed for medium to high-power switching applications. It represents an evolution in trench technology aimed at reducing conduction and switching losses compared to older planar designs. The device is qualified for the industrial market, ensuring robustness against environmental stresses common in power electronics.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation.
FAQ
What is the maximum junction temperature for the IRG7PH50UPbF?
The maximum operating junction temperature is 175°C.
Is the IRG7PH50UPbF suitable for surface mount applications?
No, the TO-247AC package is not recommended for surface mount applications.
What technology does the IRG7PH50UPbF utilize?
It utilizes low VCE(on) trench IGBT technology.
