IRG7PSH50UDPBF

Overview

The IRG7PSH50UDPBF is a single Insulated Gate Bipolar Transistor (IGBT) utilizing Trench technology, manufactured by International Rectifier. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current rating of 116 A, with a pulsed current capability of 150 A. The device operates in a TO-274AA (PG-TO274-3) package. Key electrical parameters include a collector-emitter saturation voltage of 2 V and a maximum gate-emitter voltage specification. This component integrates an ultrafast soft recovery diode, designed for high-efficiency power switching applications requiring robust voltage handling and thermal performance.

Feature Summary

• Trench IGBT technology for low on-state voltage
• Integrated ultrafast soft recovery diode
• High breakdown voltage capability
• Through-hole packaging for robust mounting

Applications

• Industrial motor drives
• Uninterruptible power supplies (UPS)
• Welding equipment

Procurement Notes

Verify the obsolete status of this part number before procurement planning, as manufacturing may have ceased. Confirm availability through authorized distributors or surplus channels if immediate replacement is required. Ensure that any substitute components meet the same voltage, current, and thermal specifications to maintain system integrity. Check datasheet revisions for any changes in pinout or mechanical dimensions compared to legacy versions.

Selection Notes

Select this component for applications requiring high voltage isolation and efficient switching characteristics. The integrated diode simplifies circuit design by eliminating external freewheeling diodes. Consider the thermal management requirements associated with the TO-274AA package when designing heat sinks. Verify that the gate drive circuitry supports the specified voltage levels to ensure reliable operation and prevent gate oxide damage.

Part Context

This IGBT belongs to the high-voltage discrete power semiconductor category from International Rectifier, now part of Infineon Technologies. It represents a specific variant within the Trench IGBT family, optimized for hard-switching applications. The part number suffix indicates specific packaging and tape-and-reel configuration details relevant to assembly processes.

Replacement Considerations

Public confirmed substitute part numbers are not provided in the available documentation due to the obsolete status. Consult manufacturer cross-reference guides for equivalent devices with matching 1200V ratings and similar current capabilities.