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The IRG7T100HF12A is a half-bridge IGBT module in the POWIR 34 package, rated for 1200V collector-emitter voltage and 100A continuous collector current at 80°C case temperature. It features low saturation voltage of 1.90V at 100A and supports a 10µs short-circuit withstand time. The integrated freewheeling diode provides fast recovery characteristics with a peak reverse recovery current of 40A. Designed for industrial applications, it offers high efficiency through optimized switching losses and rugged transient performance verified by 100% RBSOA testing.
Verify the manufacturer designation as International Rectifier or Infineon Technologies on the component marking. Confirm the POWIR 34 package type and lead-free RoHS compliance status. Check the specific revision level against the October 2014 datasheet to ensure parameter consistency. Ensure proper thermal interface material application for the specified junction-to-case thermal resistance values.
Select this module for designs requiring 1200V blocking capability and up to 100A continuous current handling. Consider the 1.90V saturation voltage for conduction loss calculations at 100A. Evaluate the 10µs short-circuit tolerance for protection circuit design. Verify gate drive requirements against the ±20V maximum rating and typical 15V operation.
This component belongs to the IRG7T series of half-bridge IGBT modules manufactured by International Rectifier, now part of Infineon Technologies. It utilizes the POWIR 34™ industry-standard package format designed for high-power density applications. The series is characterized by optimized trade-offs between conduction and switching performance for industrial power conversion systems.
Direct pin-compatible replacements within the same POWIR 34 form factor should be evaluated based on matching 1200V voltage ratings and comparable current capabilities. Verify that alternative devices meet the 10µs short-circuit withstand requirement and similar thermal resistance specifications to maintain system reliability without redesign.
The module supports a short-circuit withstand time of 10 microseconds under specified test conditions.
The isolation voltage is rated at 2500 Vrms when all terminals are shorted, tested at 50Hz for one minute.
The typical forward voltage (VF) of the diode is 2.20V at a junction temperature of 25°C and a forward current of 100A.