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The IRG8P15N120KDPBF is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by International Rectifier. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current rating of 15 A at 25 °C. The device utilizes the K-Series field-stop technology to optimize switching performance and conduction losses. It is housed in an isolated TO-247AD package designed for through-hole mounting, providing robust thermal management capabilities for high-power applications.
Verify the manufacturer marking and date code on the component body to confirm authenticity. Ensure the TO-247AD package dimensions match the target PCB footprint. Check for RoHS compliance markings consistent with the PBF suffix. Confirm that the specific revision level meets the design requirements before finalizing procurement orders.
Select this component when a 1200 V blocking capability is required alongside moderate current handling up to 15 A. The integrated anti-parallel diode simplifies circuit topology by eliminating the need for external freewheeling diodes in inductive loads. Evaluate the thermal resistance characteristics to ensure adequate heatsinking for the intended operating environment.
This part belongs to the International Rectifier K-Series family of IGBTs, which are engineered for high-efficiency power conversion. The series combines advanced field-stop architecture with optimized gate charge characteristics. These devices are widely utilized in industrial power electronics where reliability and switching speed are critical performance factors.
Cross-reference with other K-Series IGBTs from the same manufacturer for pin-compatible alternatives. Verify that any substitute maintains identical voltage ratings, current capacity, and package outline. Ensure the replacement device offers comparable switching times and thermal resistance values to preserve system performance.
It uses an isolated TO-247AD package suitable for through-hole mounting.
Yes, it features a built-in anti-parallel diode with soft recovery characteristics.
The maximum collector-emitter voltage (VCEO) is rated at 1200 V.