IRG8P15N120KDPBF

IRG8P15N120KDPBF

$2.38
  • Description:IGBT 1200V 30A TO-247AC
  • Series:-

SKU:9a8c7cf12780 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT 1200V 30A TO-247AC
  • Series:-
  • Mfr:International Rectifier
  • Package:Bulk
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):30 A
  • Current - Collector Pulsed (Icm):30 A
  • Vce(on) (Max) @ Vge, Ic:2V @ 15V, 10A
  • Power - Max:125 W
  • Switching Energy:600µJ (on), 600µJ (off)
  • Input Type:Standard
  • Gate Charge:98 nC
  • Td (on/off) @ 25°C:15ns/170ns
  • Test Condition:600V, 10A, 10Ohm, 15V
  • Reverse Recovery Time (trr):60 ns
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247AC
  • Grade:-
  • Qualification:-

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IRG8P15N120KDPBF

Overview

The IRG8P15N120KDPBF is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by International Rectifier. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current rating of 15 A at 25 °C. The device utilizes the K-Series field-stop technology to optimize switching performance and conduction losses. It is housed in an isolated TO-247AD package designed for through-hole mounting, providing robust thermal management capabilities for high-power applications.

Feature Summary

  • Integrates K-Series field-stop IGBT technology for enhanced efficiency and reduced switching losses.
  • Features a soft recovery anti-parallel diode with low reverse recovery charge to minimize cross-conduction losses.
  • Includes built-in protection against short-circuit conditions and latch-up phenomena.

Applications

  • High-frequency motor drive inverters
  • Switched-mode power supplies (SMPS)
  • Induction heating systems

Procurement Notes

Verify the manufacturer marking and date code on the component body to confirm authenticity. Ensure the TO-247AD package dimensions match the target PCB footprint. Check for RoHS compliance markings consistent with the PBF suffix. Confirm that the specific revision level meets the design requirements before finalizing procurement orders.

Selection Notes

Select this component when a 1200 V blocking capability is required alongside moderate current handling up to 15 A. The integrated anti-parallel diode simplifies circuit topology by eliminating the need for external freewheeling diodes in inductive loads. Evaluate the thermal resistance characteristics to ensure adequate heatsinking for the intended operating environment.

Part Context

This part belongs to the International Rectifier K-Series family of IGBTs, which are engineered for high-efficiency power conversion. The series combines advanced field-stop architecture with optimized gate charge characteristics. These devices are widely utilized in industrial power electronics where reliability and switching speed are critical performance factors.

Replacement Considerations

Cross-reference with other K-Series IGBTs from the same manufacturer for pin-compatible alternatives. Verify that any substitute maintains identical voltage ratings, current capacity, and package outline. Ensure the replacement device offers comparable switching times and thermal resistance values to preserve system performance.

FAQ

What type of packaging does the IRG8P15N120KDPBF use?

It uses an isolated TO-247AD package suitable for through-hole mounting.

Does this device include an integrated diode?

Yes, it features a built-in anti-parallel diode with soft recovery characteristics.

What is the maximum collector-emitter voltage rating?

The maximum collector-emitter voltage (VCEO) is rated at 1200 V.

IRG8P15N120KDPBFIRG8P15N120KDPBF
$2.38
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