IRG8P45N65UD1-EPBF

$4.13

Description：IRG8P45N65 - 650V 45A, IGBT
Series：-

SKU:875c51c7b44e Category: Single IGBTs Brand: International Rectifier

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Product introduction

Product Detailed Parameters

Description：IRG8P45N65 - 650V 45A, IGBT
Series：-
Mfr：International Rectifier
Package：Bulk
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：-
Current - Collector (Ic) (Max)：-
Current - Collector Pulsed (Icm)：-
Vce(on) (Max) @ Vge, Ic：-
Power - Max：-
Switching Energy：-
Input Type：-
Gate Charge：-
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

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IRG8P45N65UD1-EPBF

Overview

The IRG8P45N65UD1-EPBF is an N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by International Rectifier. It features a Trench technology design with an integrated ultrafast soft recovery diode. The device is housed in a TO-247AD through-hole package and supports a maximum collector-emitter voltage of 650V. It provides a continuous collector current rating of 45A at 25°C case temperature, with a pulsed current capacity of 90A. The component operates within a junction temperature range of -40°C to +175°C.

Feature Summary

Trench technology for low conduction losses
Integrated ultrafast soft recovery diode
Ruggedized design for high reliability
Lead-free packaging compliant with RoHS

Applications

Motor control drives
Switched-mode power supplies
Induction heating systems
DC-DC converters

Procurement Notes

Verify the manufacturer marking and date code against official International Rectifier or Infineon documentation. Confirm the presence of the 'EP' suffix indicating enhanced product status. Ensure the TO-247AD package matches the required thermal and mechanical specifications for the target application.

Selection Notes

Select this component for applications requiring moderate switching speeds and low on-state voltage drop. The integrated diode simplifies circuit topology for half-bridge configurations. Evaluate thermal management requirements based on the specified power dissipation limits and ensure gate drive voltages remain within the recommended operating range.

Part Context

This IGBT belongs to the IRGP series from International Rectifier, now part of Infineon Technologies. The series utilizes advanced trench gate technology to optimize the trade-off between conduction and switching losses. The EP designation signifies an enhanced product variant designed for improved robustness and consistency in industrial power electronics applications.