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Product Detailed Parameters
- Description：IRG8P45N65 - 65V, 45A IGBT
- Series：-
- Mfr：International Rectifier
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：-
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The IRG8P45N65UD1PBF is a single N-channel IGBT from International Rectifier, utilizing UltraFET technology for high-speed switching. It features a TO-247AD package with press-fit termination options and operates up to +175°C junction temperature. Key electrical parameters include a collector-emitter voltage of 650V, continuous collector current of 8A at 25°C, and a maximum forward voltage drop of 2.3V at 16A. The device offers low switching losses and rugged avalanche characteristics, suitable for demanding power conversion environments.
Feature Summary
- UltraFET technology enables fast switching speeds and reduced conduction losses
- Rugged design supports avalanche energy handling capabilities
- Press-fit termination option available for secure mechanical mounting
Applications
- High-frequency motor drives
- Switched-mode power supplies
- Induction heating systems
Procurement Notes
Verify the specific suffix designation against official datasheets to confirm exact thermal resistance values and terminal configuration. Ensure compatibility with existing heatsinking infrastructure due to the TO-247AD form factor. Confirm RoHS compliance status through manufacturer documentation prior to integration into regulated assemblies.
Selection Notes
Select this component for applications requiring moderate current levels with high switching frequency demands. The 650V rating provides sufficient headroom for standard industrial bus voltages. Consider the thermal performance relative to ambient conditions when designing heat dissipation solutions for continuous operation.
Part Context
This part belongs to the UltraFET family of insulated gate bipolar transistors designed by International Rectifier. These devices integrate advanced silicon processing to optimize the trade-off between on-state voltage and switching speed. The series targets efficiency improvements in compact power electronics designs.
Replacement Considerations
Consult official cross-reference guides for direct equivalents. Verify pinout compatibility and thermal interface requirements before substituting with alternative manufacturers' offerings.
