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Product Detailed Parameters
- Description：IGBT 1200V 80A TO-247AD
- Series：-
- Mfr：International Rectifier
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：80 A
- Current - Collector Pulsed (Icm)：105 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 35A
- Power - Max：350 W
- Switching Energy：2.3mJ (on), 1.9mJ (off)
- Input Type：Standard
- Gate Charge：315 nC
- Td (on/off) @ 25°C：35ns/190ns
- Test Condition：600V, 35A, 5Ohm, 15V
- Reverse Recovery Time (trr)：170 ns
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AD
- Grade：-
- Qualification：-
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Overview
The IRG8P50N120KD-EPBF is an N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies, formerly International Rectifier. It features a maximum continuous collector current of 50 A and a collector-emitter voltage rating of 1200 V. The device utilizes the Field-Stop Trench technology for optimized switching performance and low conduction losses. It is housed in a TO-247AD package designed for through-hole mounting. Key electrical parameters include a maximum power dissipation of 360 W at 25°C case temperature, a gate-emitter threshold voltage range of 3.5 V to 6.5 V, and a typical saturation voltage of 2.3 V at 50 A. The component operates within a junction temperature range of -40 °C to +175 °C.
Feature Summary
- Incorporates Field-Stop Trench technology to achieve high efficiency and reduced switching losses.
- Features ultrafast soft-recovery integrated anti-parallel diode with low reverse recovery charge.
- Designed for robust operation with high short-circuit capability and thermal stability.
Applications
- Industrial motor drives and servo systems
- Uninterruptible power supplies (UPS)
- High-frequency welding inverters
Procurement Notes
Verify the manufacturer marking on the component body matches Infineon branding, as International Rectifier was acquired. Confirm the suffix 'EPBF' indicates lead-free and RoHS compliance. Check for physical damage to the TO-247AD leads and ensure the datasheet version aligns with the specific production batch requirements for your design.
Selection Notes
Select this component when a 1200 V blocking voltage and 50 A continuous current are required in a standard through-hole package. Consider the TO-247AD form factor for ease of manual assembly or standard PCB mounting. Evaluate the thermal resistance characteristics against your heatsinking solution to ensure the junction temperature remains within the 175 °C limit under expected load conditions.
Part Context
This IGBT belongs to the IKW4/IRG8 series from Infineon, which utilizes advanced trench gate and field-stop technologies. These devices are engineered for medium-power applications requiring high reliability. The EPBF suffix denotes environmental compliance, ensuring the absence of hazardous substances such as lead in accordance with international standards.
Replacement Considerations
Direct pin-compatible replacements within the same voltage and current class include the IRG8P50N120KDPBF or newer generations like the IKW40N120H3 if current derating is acceptable. Verify that any substitute maintains compatible gate charge and switching speed characteristics to avoid driver circuit modifications.
