IRG8P60N120KD-EPBF

$6.36

Description：IGBT 1200V 100A TO-247AD
Series：-

SKU:6082b427fac8 Category: Single IGBTs Brand: International Rectifier

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Product introduction

Product Detailed Parameters

Description：IGBT 1200V 100A TO-247AD
Series：-
Mfr：International Rectifier
Package：Bulk
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：100 A
Current - Collector Pulsed (Icm)：120 A
Vce(on) (Max) @ Vge, Ic：2V @ 15V, 40A
Power - Max：420 W
Switching Energy：2.8mJ (on), 2.3mJ (off)
Input Type：Standard
Gate Charge：345 nC
Td (on/off) @ 25°C：40ns/240ns
Test Condition：600V, 40A, 5Ohm, 15V
Reverse Recovery Time (trr)：210 ns
Operating Temperature：-40°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247AD
Grade：-
Qualification：-

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IRG8P60N120KD-EPBF

Overview

The IRG8P60N120KD-EPBF is an N-channel Insulated Gate Bipolar Transistor manufactured by Infineon Technologies. It features a maximum continuous collector current of 100 A and a collector-emitter breakdown voltage of 1200 V. The device utilizes a TO-247AD through-hole package with three pins. Key electrical specifications include a maximum power dissipation of 420 W, a gate-emitter voltage rating of ±30 V, and a switching speed capability up to 1 MHz. The component operates within a temperature range of -40 °C to +150 °C.

Feature Summary

High-voltage N-channel IGBT architecture designed for robust power switching applications
Through-hole TO-247AD packaging facilitates secure mechanical mounting and thermal management
Optimized for high-frequency operation with specified switching speeds up to 1 MHz

Applications

Industrial motor drive inverters
Uninterruptible Power Supply (UPS) systems
High-power welding equipment

Procurement Notes

Verify the manufacturer designation as Infineon, following the acquisition of International Rectifier. Confirm the specific suffix 'EPBF' indicates lead-free compliance and environmental standards. Ensure the package type matches the required TO-247AD footprint for your PCB design or heatsink interface. Cross-reference the datasheet revision date to ensure compatibility with current technical specifications.

Selection Notes

Select this component when designing circuits requiring 1200 V blocking capability and 100 A continuous current handling. The TO-247AD package is suitable for applications needing reliable through-hole mounting. Consider the 420 W power dissipation limit and thermal resistance characteristics for adequate heatsinking. Verify that the 1 MHz switching speed aligns with your inverter frequency requirements.

Part Context

This IGBT belongs to the SUPERFET family from Infineon, known for low conduction losses and fast switching. It serves as a core switching element in medium-to-high power conversion systems. The device integrates advanced trench technology to enhance efficiency compared to older planar designs. Its rugged construction supports demanding industrial environments.