IRG8P75N65UD1PBF

$3.10

Description：IRG8P75N65 - 650V 45A IGBT
Series：-

SKU:139cfa940ba9 Category: Single IGBTs Brand: International Rectifier

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Product introduction

Product Detailed Parameters

Description：IRG8P75N65 - 650V 45A IGBT
Series：-
Mfr：International Rectifier
Package：Bulk
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：-
Current - Collector (Ic) (Max)：-
Current - Collector Pulsed (Icm)：-
Vce(on) (Max) @ Vge, Ic：-
Power - Max：-
Switching Energy：-
Input Type：-
Gate Charge：-
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
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Qualification：-

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IRG8P75N65UD1PBF

Overview

The IRG8P75N65UD1PBF is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by International Rectifier, now part of Infineon Technologies. It features TRENCHSTOP™ 5 technology and is co-packaged with an ultra-low forward voltage drop diode optimized for soft switching applications. The device is housed in a lead-free TO-247AD package and supports a maximum junction temperature of 175 °C.

Feature Summary

Integrates TRENCHSTOP™ 5 IGBT technology for low conduction and switching losses
Features an ultra-low forward voltage drop diode specifically designed for soft switching
Provides rugged transient performance with a square Reverse Biased Safe Operating Area (RBSOA)
Ensures excellent current sharing capability for parallel operation

Applications

Induction heating systems
Soft switching power converters
High-efficiency motor drives
Solar inverters

Procurement Notes

Verify the manufacturer designation on the component marking, as International Rectifier operations were acquired by Infineon Technologies. Confirm that the suffix 'PBF' indicates a lead-free compliant package suitable for RoHS-regulated environments. Ensure the specific 'UD1' variant is selected to guarantee the presence of the ultra-low VF diode required for soft switching designs.

Selection Notes

Select this component when designing circuits requiring high efficiency at moderate switching frequencies combined with soft recovery characteristics. The integrated ultra-low VF diode distinguishes it from standard IGBTs, making it ideal for resonant topologies. Evaluate thermal management requirements based on the TO-247AD package's dissipation capabilities and the 175 °C maximum junction temperature rating.

Part Context

This device belongs to the IRG8P series utilizing Infineon's TRENCHSTOP™ 5 architecture. It represents an evolution in discrete power semiconductors designed to minimize energy loss during transitions. The product line emphasizes reliability and performance in demanding industrial power conversion environments.

Replacement Considerations

Direct substitutes include other TRENCHSTOP™ 5 devices with similar voltage and current ratings, such as the IRG8P75N65UD or IRG8P75N65UD1MPBF. Verify pinout compatibility and thermal resistance specifications before implementation.

FAQ

What is the primary advantage of the UD1 suffix in this model?

The UD1 suffix indicates the inclusion of an ultra-low forward voltage drop diode, which is specifically engineered to enhance performance in soft switching applications.

Is this component suitable for parallel operation?

Yes, the device features tight parameter distribution and a positive VCE(on) temperature coefficient, ensuring excellent current sharing when multiple units are operated in parallel.