IRGB15B60KDPBF-INF

Overview

The IRGB15B60KDPBF is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It utilizes silicon technology and is housed in a TO-220FP-3 through-hole package. The device features a maximum collector-emitter voltage (VCEO) of 600 V and a continuous collector current (IC) of 15 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage (VCE(sat)) of 1.8 V, a gate-emitter voltage range of -20 V to +20 V, and a power dissipation (Pd) of 39 W. The component operates within a temperature range of -55°C to +175°C.

Feature Summary

• Single IGBT configuration for discrete switching applications
• Low saturation voltage design for reduced conduction losses
• Robust thermal performance with high junction temperature capability

Applications

• Motor control drives
• Switching power supplies
• Inverter circuits

Procurement Notes

Verify the exact part number suffix against official Infineon documentation, as variations such as KDPBF indicate specific packaging or compliance attributes. Confirm availability status, as this component may be subject to end-of-life restrictions or discontinuation notices. Ensure that the procurement source provides valid traceability and authenticity guarantees for industrial-grade semiconductor components.

Selection Notes

Select this component when a 600 V rated IGBT with approximately 15 A continuous current capacity is required. The TO-220FP-3 package is suitable for through-hole mounting on printed circuit boards where moderate power dissipation is expected. Evaluate thermal management requirements based on the 39 W power dissipation rating and ensure the operating environment stays within the specified -55°C to +175°C junction temperature limits.

Part Context

This device belongs to Infineon's discrete IGBT portfolio, designed for general-purpose power switching. It serves as a fundamental building block in medium-power electronic systems. The product line emphasizes reliability and efficiency in converting electrical energy, supporting various industrial and consumer electronics applications requiring robust semiconductor switching capabilities.

Replacement Considerations

Consult official Infineon cross-reference guides for verified substitutes. Potential replacements must match the 600 V voltage rating, similar current handling, and TO-220FP-3 package dimensions. Verify that any alternative device maintains compatible gate drive requirements and thermal characteristics to ensure seamless integration without redesigning the surrounding circuitry.