IRGB4061DPBF

Description：IGBT TRENCH 600V 36A TO-220AB
Series：-

SKU:c1698235a8eb Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH 600V 36A TO-220AB
Series：-
Mfr：Infineon Technologies
Package：Tube
IGBT Type：Trench
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：36 A
Current - Collector Pulsed (Icm)：72 A
Vce(on) (Max) @ Vge, Ic：1.95V @ 15V, 18A
Power - Max：206 W
Switching Energy：95µJ (on), 350µJ (off)
Input Type：Standard
Gate Charge：35 nC
Td (on/off) @ 25°C：40ns/105ns
Test Condition：400V, 18A, 22Ohm, 15V
Reverse Recovery Time (trr)：100 ns
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-220-3
Supplier Device Package：TO-220AB
Grade：-
Qualification：-

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IRGB4061DPBF

Overview

The IRGB4061DPbF is an n-channel Insulated Gate Bipolar Transistor (IGBT) with an integrated ultrafast soft recovery diode, manufactured by Infineon Technologies. It utilizes low VCE(on) Trench IGBT technology and features a TO-220AB package for through-hole mounting. The device supports a maximum collector-to-emitter voltage of 600V and a continuous collector current of 36A at 25°C case temperature. It operates within a junction temperature range of -55°C to +175°C and offers a short circuit safe operating area of 5μs.

Feature Summary

Low VCE(on) Trench IGBT Technology
Ultrafast Soft Recovery Co-Pak Diode
Positive VCE(on) Temperature Coefficient
Square RBSOA

Applications

High efficiency power conversion
Switch mode power supplies
Motor control applications
Industrial inverters

Procurement Notes

Verify the component authenticity against official Infineon documentation. Confirm that the specific ordering suffix matches the required lead-free package specifications. Ensure the procurement channel provides valid traceability records for industrial-grade components. Cross-reference the datasheet revision date with the manufacturing lot code to ensure compliance with current technical standards.

Selection Notes

Select this component for designs requiring high efficiency across a wide range of switching frequencies. The positive temperature coefficient facilitates excellent current sharing in parallel operation. Consider the thermal resistance values when designing heat sinks for continuous operation at elevated temperatures. Evaluate the switching losses against the application's specific frequency requirements.

Part Context

This part belongs to the IRGB series of insulated gate bipolar transistors from Infineon Technologies. It is designed for industrial market applications where rugged transient performance and reliability are critical. The TO-220AB package allows for standard through-hole mounting on printed circuit boards.

Replacement Considerations

Consult official Infineon substitution guides for verified alternatives. Ensure any replacement maintains compatible pinout, voltage ratings, and thermal characteristics.