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The IRGB4630DPBF is a single N-channel Insulated Gate Bipolar Transistor (IGBT) with an integrated ultrafast soft recovery diode, manufactured by Infineon Technologies. It utilizes TRENCHSTOP technology and is housed in a TO-220AB through-hole package. The device features a collector-emitter voltage rating of 600V and supports a continuous collector current of 47A at 25°C case temperature. Key electrical parameters include a typical saturation voltage of 1.65V at 18A, a maximum power dissipation of 206W, and a short-circuit withstand time of 5µs. It operates within a junction temperature range of -40°C to +175°C.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and lead-free compliance. Confirm that the component meets RoHS standards if required by your design specifications. Cross-reference the datasheet revision date to ensure all latest electrical characteristics and thermal resistance values are accounted for during integration.
Select this component when designing circuits requiring a 600V IGBT with integrated fast recovery diodes in a standard TO-220AB package. Ensure the application demands a continuous collector current capability of up to 47A at low case temperatures or 30A at elevated temperatures. Verify that the system can accommodate the specified gate drive requirements and thermal management needs for the 206W power dissipation rating.
This part belongs to the IRGx4630D family of IGBTs from Infineon Technologies, originally developed under International Rectifier. The family includes variants such as IRGP4630DPBF (TO-247AC), IRGS4630DPBF (D2Pak), and IRGIB4630DPBF (TO-220AB Full-Pak). These devices share identical electrical characteristics but differ in physical packaging and mounting configurations to suit various PCB layout and thermal interface requirements.
Direct functional substitutes within the same package include IRGP4630DPBF (TO-247AC) and IRGS4630DPBF (D2Pak), provided the mechanical footprint allows adaptation. Other family members like IRGB4640D, IRGB4650D, and IRGB4660D offer higher current ratings but require verification of pinout compatibility and thermal constraints before substitution.
The device has a confirmed short-circuit withstand time of 5 microseconds.
Yes, it integrates an ultrafast soft recovery diode with a reverse recovery energy of 260µJ at 175°C.
The continuous gate-to-emitter voltage rating is ±20V, with transient voltages allowed up to ±30V.