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Product Detailed Parameters
- Description：IGBT 600V 65A TO-220AC
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：65 A
- Current - Collector Pulsed (Icm)：72 A
- Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 24A
- Power - Max：250 W
- Switching Energy：115µJ (on), 600µJ (off)
- Input Type：Standard
- Gate Charge：75 nC
- Td (on/off) @ 25°C：41ns/104ns
- Test Condition：400V, 24A, 10Ohm, 15V
- Reverse Recovery Time (trr)：89 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220AC
- Grade：-
- Qualification：-
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Overview
The IRGB4640DPBF is an n-channel Insulated Gate Bipolar Transistor (IGBT) with an integrated ultrafast soft recovery diode, manufactured by Infineon Technologies. It features a TO-220AB package and supports a collector-to-emitter voltage of 600 V. The device provides a continuous collector current of 65 A at 25°C case temperature and 40 A at 100°C. It exhibits a typical saturation voltage of 1.60 V at 24 A and includes a short-circuit safe operating area rating of 5 µs.
Feature Summary
- Integrates an ultrafast soft recovery diode to optimize switching performance.
- Features low on-state voltage and switching losses for high efficiency.
- Provides a square Reverse Bias Safe Operating Area (RBSOA) up to 175°C.
- Includes a positive VCE(on) temperature coefficient for reliable parallel operation.
Applications
- Industrial Motor Drive
- Inverters
- Uninterruptible Power Supplies (UPS)
- Welding
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm the exact package type and lead-free compliance status. Ensure that the procurement channel sources components directly from authorized distributors or the manufacturer to guarantee authenticity. Cross-reference the part number with the latest datasheet revisions to confirm electrical characteristics match the intended application requirements before finalizing orders.
Selection Notes
Select this component for applications requiring robust hard-switching performance and high power capability. The device is suitable for designs needing excellent current sharing in parallel configurations due to its positive temperature coefficient. Consider the thermal resistance values when designing heat sinks, as the TO-220AB package requires adequate cooling to maintain junction temperatures within the specified range during continuous operation.
Part Context
This IGBT belongs to the IRGx4640D family, which utilizes thin wafer technology to reduce conduction and switching losses. The series is designed for wide switching frequency ranges and offers high system efficiency. The IRGB4640DPBF specifically denotes the version housed in a TO-220AB package, distinguishing it from other variants like the TO-247AC or D2Pak options within the same electrical specification group.
Replacement Considerations
IRGP4640DPbF
FAQ
What is the maximum short-circuit time rating for the IRGB4640DPBF?
The device has a short-circuit safe operating area (SCSOA) rating of 5 µs.
Does the IRGB4640DPBF include an integrated diode?
Yes, it integrates an ultrafast soft recovery diode.
What is the maximum operating junction temperature?
The maximum operating junction temperature is 175°C.
