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Product Detailed Parameters
- Description：IGBT 650V 21A TO-220AB
- Series：-
- Mfr：International Rectifier
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：21 A
- Current - Collector Pulsed (Icm)：24 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 8A
- Power - Max：100 W
- Switching Energy：200µJ (on), 90µJ (off)
- Input Type：Standard
- Gate Charge：30 nC
- Td (on/off) @ 25°C：30ns/100ns
- Test Condition：400V, 8A, 50Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220AB
- Grade：-
- Qualification：-
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Overview
The IRGB4715DPBF is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by International Rectifier, now part of Infineon Technologies. It features a collector-emitter breakdown voltage of 650 V and a maximum continuous collector current of 21 A. The device supports a pulsed collector current capability and is rated for a power dissipation of 100 W. It utilizes a TO-220AB through-hole package with three pins. The component operates within a junction temperature range of -40°C to 175°C and includes an integrated anti-parallel recovery diode.
Feature Summary
- Single IGBT structure with integrated anti-parallel fast recovery diode
- High voltage blocking capability suitable for industrial switching applications
- Through-hole mounting configuration for robust mechanical connection
Applications
- Industrial motor drives
- Inverter circuits
- Switching power supplies
Procurement Notes
Verify the obsolete status of this component before integration into new designs. Confirm that the manufacturer designation aligns with Infineon Technologies following the acquisition of International Rectifier. Ensure the TO-220AB package dimensions match the target PCB footprint requirements. Check for available replacement alternatives if long-term supply stability is required for production cycles.
Selection Notes
Select this component when a 650 V rated IGBT with 21 A continuous current capacity is required in a through-hole package. Consider the thermal management needs associated with 100 W power dissipation. Evaluate the switching speed characteristics against application requirements. Verify compatibility with gate drive voltages typical for standard IGBT drivers.
Part Context
This part belongs to the single IGBT category from International Rectifier's discrete semiconductor portfolio. It represents a legacy product line now managed under Infineon Technologies. The TO-220AB package provides a standardized form factor for high-power electronic assemblies. The inclusion of a recovery diode simplifies circuit design for inductive load switching scenarios.
Replacement Considerations
Consult official Infineon documentation for direct pin-compatible replacements or updated series equivalents. Verify electrical parameters such as Vces and Ic ratings when substituting. Ensure thermal resistance characteristics are comparable to maintain system reliability.
