IRGB4B60KPBF

IRGB4B60KPBF

$0.52
  • Description:IGBT NPT 600V 12A TO-220AB
  • Series:-

SKU:5b89e4aeffd0 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT NPT 600V 12A TO-220AB
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Bulk,Tube
  • IGBT Type:NPT
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):12:00 AM
  • Current - Collector Pulsed (Icm):24 A
  • Vce(on) (Max) @ Vge, Ic:2.5V @ 15V, 4A
  • Power - Max:63 W
  • Switching Energy:130µJ (on), 83µJ (off)
  • Input Type:Standard
  • Gate Charge:12 nC
  • Td (on/off) @ 25°C:22ns/100ns
  • Test Condition:400V, 4A, 100Ohm, 15V
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220AB
  • Grade:-
  • Qualification:-

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IRGB4B60KPBF

Overview

The IRGB4B60KPBF is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a maximum collector current of 12 A and a breakdown voltage between collector and emitter of 600 V. The device utilizes a D2PAK surface-mount package with three terminals. Key electrical characteristics include a maximum gate-emitter threshold voltage of 5.5 V, a maximum gate-emitter voltage rating of 20 V, and a maximum fall time of 89 ns. The component supports an operating temperature range up to 175 °C and has a peak reflow temperature tolerance of 225 °C.

Feature Summary

  • High-voltage switching capability with 600 V collector-emitter breakdown
  • Robust thermal performance supporting junction temperatures up to 175 °C
  • Integrated diode structure for inductive load commutation
  • Surface-mount D2PAK packaging for automated assembly

Applications

  • Switch-mode power supplies
  • Motor control inverters
  • Induction heating systems
  • Uninterruptible power supplies

Procurement Notes

Verify the specific suffix 'PBF' confirms lead-free compliance and RoHS standards. Confirm the package type matches the required D2PAK footprint. Check the manufacturer's official documentation for the latest product qualification reports and FIT data to ensure reliability requirements are met for the target application environment.

Selection Notes

Select this component when a 600 V, 12 A IGBT is required for medium-power switching applications. Ensure the gate drive circuit can accommodate the specified 5.5 V threshold and 20 V maximum rating. Verify that the thermal management solution can handle the power dissipation at the expected operating frequency and duty cycle within the 175 °C limit.

Part Context

This part belongs to Infineon's discrete IGBT portfolio designed for general-purpose power switching. It is distinct from MOSFETs by offering lower conduction losses at higher voltages. The D2PAK form factor allows for efficient heat dissipation compared to smaller packages, making it suitable for board-level power stages where moderate current handling is necessary.

Replacement Considerations

Consult official cross-reference guides for direct replacements. Ensure any substitute maintains the 600 V rating, 12 A current capacity, and compatible pinout configuration.

IRGB4B60KPBFIRGB4B60KPBF
$0.52
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